Research field (1):
Electronic devices and equipment
Research keywords (5):
electron transport properties
, widegap semiconductors
, semiconductor heterostructures
, multi junction solar cells
, surface activated bonding
Research theme for competitive and other funds (15):
2021 - 2025 Control of nanostructures of directly-bonded Si/diamond interfaces by annealing
2020 - 2023 Heterojunction formation of conductive diamond and GaN, Ga2O3 for vertical device applications
2019 - 2022 Formation of directly-bonded interface between gallium oxide and group-IV semiconductor for power device application
Ryo Kagawa, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang. Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth. Functional Diamond. 2024
Ryo Kagawa, Zhe Cheng, Keisuke Kawamura, Yutaka Ohno, Chiharu Moriyama, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Koji Inoue, Yasuyoshi Nagai, et al. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes. Small. 2023
Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa. Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers. Japanese Journal of Applied Physics. 2023. 62. SN. SN1013-SN1013
A. Kobayashi, H. Tomiyama, Y. Ohno, Y. Shimizu, Y. Nagai, N. Shigekawa, J. Liang. Room temperature bonding of GaN and diamond via a SiC layer. Functional Diamond. 2022. 2. 1. 142-150
上東洋太, 大曲新矢, 梅沢仁, 山田英明, LIANG Jianbo, 重川直輝. Fabrication and electrical characterization of n+-Si/p-diamond heterojunction diodes. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
上東洋太, 大曲新矢, 梅沢仁, 山田英明, LIANG Jianbo, 重川直輝. Evaluation of thermal stability of Si/diamond heterojunction diodes. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
上東洋太, 大曲新矢, 梅沢仁, 山田英明, LIANG Jianbo, 重川直輝. Fabrication of diamond/Si heterojunction diodes by surface activated bonding. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
Naoteru Shigekawa, Hideki Takagi, Masahisa Fujino, Eiji Higurashi, Nobuhiko Nishiyama, Takehito Shimatsu, Noriaki Toyoda. Low Temperature Bonding for 3D Integration FOREWORD. JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59
Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa. Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature. Proceedings of the 6th International IEEE Workshop on Low Temperature Bonding for 3D Integration. 2019. 2-2
GaAs//Si Hybrid Double Junction Cells Fabricated by Direct Bonding of Epitaxially Lifted-Off GaAs Subcell Layers on PET Films
(29th International Photovoltaic Science and Engineering Conference 2019)