Research field (4)：
Electric/electronic material engineering
, Crystal engineering
, Applied materials
, Electronic devices and equipment
Research theme for competitive and other funds (18)：
2024 - 2029 A Study on realizing unexplored frequency and room temperature operation THz-QCL through innovation of inter-subband transition mechanism
2023 - 2026 ナローバンドギャップ領域希薄窒化物半導体薄膜の結晶成長技術開拓と物性解析
2024 - 2025 狭バンドギャップ半導体を用いた光熱電変換材料の創製
2023 - 2024 ナローバンドギャップ領域の半導体成長と物性解析
2022 - 2024 希薄窒化物半導体のナローバンドギャップ領域の特性解析
2023 - Growth and Characterization of Sb-based Dilute Nitride Semiconductors by Sputtering
2023 - Growth and Characterization of Sb-based Dilute Nitride Semiconductors by Sputtering
2021 - 2023 ナローバンドギャップ半導体を用いたヘテロ構造作製と物性解析
2022 - 2023 ナローバンドギャップ領域の半導体成長と物性解析
2020 - 2021 希薄窒化物半導体を用いた遠赤外光デバイスの創製
2016 - 2019 Development of Ultra-High Performance Sb-Based Teraherts Transistors
2015 - 2018 Elucidation of physical properties of Sb-based dilute nitride semiconductor and creation of high brightness far infrared light emitting element
2015 - 2016 Sb系希薄窒化物半導体を用いた遠赤外線LEDと光検出器の開発
2015 - 2016 Sb系半導体材料を用いた中赤外発光デバイスの研究
2015 - 2016 Sb系半導体材料を用いた中赤外線発光素子に関する研究
2012 - 2015 Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
2013 - Recent progress of AlGaN based deep-UV LEDs
2010 - 2011 Development of deep ultraviolet LED and LD on nitride semiconductor
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Papers (43)：
Mitsuhiro Muta, Hiroyuki Oogami, Kengo Mouri, Hirokazu Kawashima, Noritoshi Maeda, Ajmal Khan, Yukio Kashima, Eriko Katsuura, Yuuki Nakamura, Kou Sumishi, et al. Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels. IEICE Tech. Rep. 2023. 123. 290. 102-105
Narihito Okada, Takahiro Saito, Sachie Fujikawa, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama, Kazuyuki Tadatomo. Investigation of off-cut angle of sapphire for epitaxial lateral overgrowth of AlN and fabrication of high-quality AlN template. JOURNAL OF CRYSTAL GROWTH. 2022. 588
Ryuto Machida, Ryusuke Toda, Shinsuke Hara, Issei Watanabe, Kouichi Akahane, Sachie Fujikawa, Akifumi Kasamatsu, Hiroki Fujishiro. Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2022. 40. 3
M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama. Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (vol 32, 055702, 2021). NANOTECHNOLOGY. 2021. 32. 36
M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama. Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (vol 32, 055702, 2021). NANOTECHNOLOGY. 2021. 32. 36
矢野裕子, 高宮健吾, 藤川沙千恵, 八木修平, 矢口裕之, 小林真隆, 秋山英文. Study on the Binding Energy of Biexcitons Localized at Isoelectronic Traps in Nitrogen δ-Doped GaAs. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
永田裕弥, 永田裕弥, 仲元寺郁弥, 仲元寺郁弥, 前田哲利, 藤川紗千恵, 藤川紗千恵, 矢口裕之, 祝迫恭, 平山秀樹. Dependence of emission efficiency of 230 nm AlGaN far-UVC LED on quantum well structure. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
Growth Morphology of GaSb Islands on Ga-Induced Si(100)-2×2 Reconstructed Surface
(12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Colloquium on Scanning Probe Microscopy(ACSIN-12&ICSPM21))
Reduction of Forward Voltage in 230 nm AlGaN far-UVC LED Using Polarization Assisted AlGaN Hole Injection Layer
(APWS 2024)
