Shin'ichi Nishizawa

ニシザワシンイチ | Shin'ichi Nishizawa

Affiliation and department：

Research field (3)： Electronic devices and equipment , Electric/electronic material engineering , Applied physics - general

Research theme for competitive and other funds (13)：

Show all

Papers (223)：

Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito. Mechanism of gate voltage spike under digital gate control at IGBT switching operations. Power Electronic Devices and Components. 2024. 7. 100054-100054
Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shin-Ichi Nishizawa, Wataru Saito. Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN). IEEE Access. 2024. 12. 96936-96945
Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping. IEEE Open Journal of Power Electronics. 2024. 5. 392-401
Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker. Microelectronics Reliability. 2023. 150. 115119-115119
Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito. Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control. Power Electronic Devices and Components. 2023. 6. 100052-100052

ｍore...

MISC (32)：

ｍore...

Books (2)：

Lectures and oral presentations (107)：

Investigations on Acceptable Breakdown Voltage Variation of Parallel-Connected SiC MOSFETs Applied in Solid-State Circuit Breakers
(2021)
Avalanche Current Balancing Using Parallel Connection of SiC-JFETs with Cascode Connection
(ESREF 2021 : 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021 2021)
Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology
(ISPSD2021 2021)
Accurate TCAD Simulation of Trench-Gate IGBTs and Its Application to Prediction of Carrier Lifetime Requirements for Future Scaled Devices
(5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2021) 2021)
新世代Si-IGBTを支えるウェハ・プロセス技術
(2021)

ｍore...

Committee career (7)：

Show all

Awards (4)：

Association Membership(s) (5)：

化学工学会 , 応用物理学会 , IEEE(PELS) , 日本結晶成長学会 , IEEE(ED)

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page