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J-GLOBAL ID:201801000291501271   Update date: Apr. 14, 2025

Togashi Rie

トガシ リエ | Togashi Rie
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Affiliation and department:
Job title: Associate Professor
Research field  (3): Structural and functional materials ,  Electronic devices and equipment ,  Crystal engineering
Research keywords  (9): 光デバイス ,  μLED ,  InGaN/GaNナノコラム ,  Hydride vapor phase epitaxy ,  First principles calculation ,  Growth of oxide semiconductor ,  Growth of group III nitride semiconductor ,  Thermodynamic analysis ,  Growth of semiconductor materials
Research theme for competitive and other funds  (16):
  • 2024 - 2027 赤色発光素子応用に資するInGaNマトリクスの構造制御
  • 2022 - 2025 水ガスを用いた原料分子種生成制御反応の解明による高品質酸化インジウム結晶の創出
  • 2023 - 2024 Development of Fundamental Technologies for Integrated RGB Emitting Devices Using Nanocolumn Crystals
  • 2021 - 2023 Growth technique of High quality gallium oxide crystal by toxic gas-free OVPE method
  • 2019 - 2022 新規原料分子種生成メカニズムの解明による高純度酸化ガリウム半導体結晶の創出
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Papers (62):
  • Hiroto Sekiguchi, Hayato Katagiri, Kota Hoshino, Rie Togashi, Katsumi Kishino. Voltage-tunable RGB emission from a single self-assembled InGaN nanocolumn LED. Japanese Journal of Applied Physics. 2025. 64. 2. 028004-028004
  • Takayoshi Oshima, Rie Togashi, Yuichi Oshima. Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure. Science and Technology of Advanced Materials. 2024. 25. 1. 2378683
  • Kota Hoshino, Rie Togashi, Katsumi Kishino. Red Emission of Well-Ordered InGaN/GaN Nanocolumn Arrays on Si (111) Substrates Grown via Nanotemplate Selective-Area Growth. physica status solidi (b). 2024. 2400064-1-2400064-8
  • Hiroyuki Shimada, Hironobu Kariyazono, Yohei Nakagawa, Shinji Terao, Kentaro Takayanagi, Koichiro Akasaka, Shunsuke Ishizawa, Koichi Morozumi, Tsutomu Asakawa, Rie Togashi, et al. Bottom-up vertical GaN nanocolumn Schottky barrier diodes with extremely high packing density grown by molecular beam epitaxy. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP67-02SP67
  • Tomohiro Yamaguchi, Yasushi Nanishi, Takuo Sasaki, Masamitu Takahasi, Takeyoshi Onuma, Tohru Honda, Rie Togashi, Katsumi Kishino. RF-MBE Growth of GaInN and Application to Red LED. Journal of the Japanese Association for Crystal Growth. 2024. 51. 2. 51-2-06
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MISC (77):
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Lectures and oral presentations  (394):
  • Red Emitting (620nm) InGaN-based Nanocolumn LEDs - Efforts to Improve Current Injection Efficiency
    (The 72nd JSAP Spring meeting 2025 2025)
  • Growth of ordered nitride nanocolumns on the entire surface of Si(100) nanoimprinted substrates by the nanotemplate selective growth method
    (The 72nd JSAP Spring meeting 2025 2025)
  • Current injection structure analysis of nanocolumn LEDs with semipolar GaInN active layers
    (The 72nd JSAP Spring meeting 2025 2025)
  • InGaN/GaN Nanocolumns Prepared via Nanotemplate Selective-Area Growth for Micro-LED Displays
    (The 31th International Display Workshops (IDW’24) 2024)
  • Emission colour control of self-assembled InGaN nanocolumns and micro-integration of regularly arranged InGaN nanocolumns.
    (5th Conference on Semiconductor Nanophotonics 2024)
more...
Professional career (1):
  • 博士(工学) (東京農工大学)
Awards (4):
  • 2016/03/19 - 応用物理学会 第6回(2015年度)女性研究者研究業績・人材育成賞(小舘香椎子賞)研究業績部門(若手) 実験と計算化学の協調によるIII族窒化物半導体気相成長の研究
  • 2015/11/06 - The 1st International Workshop on Gallium Oxide and Related Materials 2015 Young Researcher Award
  • 2014/07/26 - 日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 研究奨励賞 前駆体二段階生成HVPE法による高速・高温InN成長
  • 2010/05/15 - 日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 発表奨励賞 GaN自立基板上InNハイドライド気相成長における基板極性の影響
Association Membership(s) (4):
応用物理学会 ,  日本結晶成長学会 ,  結晶工学分科会 ,  ナノ構造・エピタキシャル成長分科会
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