Sasaki Takuo

ササキタクオ | Sasaki Takuo

Affiliation and department：

Research field (3)： Crystal engineering , Nanomaterials , Thin-film surfaces and interfaces

Research keywords (3)：ナノ構造 , 放射光利用 , 半導体結晶成長

Research theme for competitive and other funds (9)：

2024 - 2027 Study on three-dimensional lattice-matched epitaxy in nitride semiconductor crystal growth
2024 - 2027 赤色発光素子応用に資するInGaNマトリクスの構造制御
2022 - 2026 Development of GaN CMOS Monolithic Integrated Circuits Technology Using Crystal Hetero-Polarity Control
2020 - 2023 In系窒化物半導体ヘテロエピタキシャル成長におけるヘテロ界面制御技術の構築
2019 - 2022 Development of free-standing nitride substrates using graphene

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Papers (44)：

Kentaro Kutsukake, Takefumi Kamioka, Kota Matsui, Ichiro Takeuchi, Takashi Segi, Takuo Sasaki, Seiji Fujikawa, Masamitu Takahasi. Feature extraction and spatial imaging of synchrotron radiation X-ray diffraction patterns using unsupervised machine learning. Science and Technology of Advanced Materials: Methods. 2024. 4. 1
Takuo Sasaki, Takuya Iwata, Kanya Sugitani, Masamitu Takahasi. Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements. Japanese Journal of Applied Physics. 2024. 63. 2. 020901-020901
Takuo Sasaki, Takuya Iwata, Kanya Sugitani, Takahiro Kawamura, Toru Akiyama, Masamitu Takahasi. Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN. Applied Physics Express. 2024. 17. 2. 025502-025502
Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Seiji Fujikawa, Takuo Sasaki, Masamitu Takahasi, Shigeya Naritsuka. Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer. JOURNAL OF CRYSTAL GROWTH. 2021. 555
Shigeya Naritsuka, Jumpei Yamada, Yuki Ueda, Asato Nakashima, Tatsuya Kashio, Takahiro Maruyama, Seiji Fujikawa, Takuo Sasaki, Masamitu Takahasi. X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer. JOURNAL OF CRYSTAL GROWTH. 2020. 549

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MISC (18)：

片山芳則, 高橋正光, 佐々木拓生, 綿貫徹, 町田晃彦, 齋藤寛之. QST微細構造プラットフォームが提供する放射光利用技術. まてりあ. 2019. 58. 12. 770-775
佐々木拓生, 高橋正光. 放射光その場X線逆格子マッピングによる化合物半導体の結晶成長ダイナミクス. 応用物理. 2018. 87. 6. 409-415
佐々木拓生, 高橋正光. その場放射光X線回折によるIII-Vエピ成長のひずみ解析. 日本結晶成長学会誌. 2015. 42. 3. 210-217
小寺大介, 佐々木拓生, 高橋正光, 鈴木秀俊, 小島信晃, 大下祥雄, 神谷格, 山口真史. GaAs基板の傾斜方向がInGaAs膜中緩和過程に与える影響-X線回折その場観察-. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2014. 75th
下村憲一, 鈴木秀俊, 佐々木拓生, 高橋正光, 大下祥雄, 神谷格. XRDによるInAs量子ドット上のキャップ層成長のその場観察. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2013. 74th

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Patents (1)：

Education (3)：

Professional career (1)：

Work history (8)：

2024/07 - 現在 National Institutes for Quantum and Radiological Science and Technology
2020/04 - 現在 (併任)兵庫県立大学大学院理学研究科客員准教授
2019/07 - 2024/06 National Institutes for Quantum and Radiological Science and Technology
2022/04 - 2024/03 文部科学省科学技術・学術政策局研究環境課行政調査員
2016/04 - 2019/06 National Institutes for Quantum and Radiological Science and Technology

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Committee career (6)：

2022/01 - 現在 2022 International Conference on Solid State Devices and Materials (SSDM) program committee
2022/04 - 2024/03 応用物理学会機関誌企画・編集委員
2018/09 - 2022/03 応用物理学会学術講演会プログラム編集委員
2021/01 - 2021/12 2021 International Conference on Solid State Devices and Materials (SSDM) program committee
2020/01 - 2020/12 2020 International Conference on Solid State Devices and Materials (SSDM2020) program committee

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Awards (7)：

2022/04 - 応用物理学会 Poster Award
2015/05 - 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞
2010/03 - 応用物理学会講演奨励賞
2009/11 - 19th International Photovoltaic Science and Engineering Conference and Exhibition Best poster award
2008/05 - Best poster award

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Association Membership(s) (3)：

THE JAPANESE SOCIETY FOR SYNCHROTRON RADIATION RESEARCH , JAPANESE ASSOCIATION FOR CRYSTAL GROWTH , THE JAPAN SOCIETY OF APPLIED PHYSICS

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