Rchr
J-GLOBAL ID：201801013717882329   Update date: Nov. 08, 2024

Noriyuki Miyata

ミヤタ ノリユキ | Noriyuki Miyata
Research theme for competitive and other funds  (6)：
  • 2019 - 2022 Two-terminal resistance change memory based on interface dipole modulation
  • 2016 - 2019 Multi-stack interface dipole modulation memory and analog operation dynamics
  • 2012 - 2015 Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
  • 2011 - 2012 金属酸化物の表面反応性を利用したグラフェンの創成
  • 2009 - 2012 Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies
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Papers (124)：
  • Yuto Miyatake, Rui Tang, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Makoto Okano, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka. Photonic Matrix-Vector Multiplication with Low-Insertion-Loss and Non-Volatile Ge2Sb2Te3S2 Intensity Modulators. Journal of Lightwave Technology. 2024. 42. 12. 4347-4354
  • Yuto Miyatake, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka. Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S2. IEEE Transactions on Electron Devices. 2023. 70. 4. 2106-2112
  • Yuto Miyatake, Chong Pei Ho, Prakash Pitchappa, Ranjan Singh, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Kasidit Toprasertpong, Shinichi Takagi, et al. Non-volatile compact optical phase shifter based on Ge2Sb2Te5 operating at 2.3 μm. Optical Materials Express. 2022. 12. 12. 4582-4582
  • Yuto Miyatake, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano, Kasidit Toprasertpong, Shinich Takagi, Mitsuru Takenaka. Record-low Loss Non-volatile Mid-infrared PCM Optical Phase Shifter based on Ge2Sb2Te3S2. Technical Digest - International Electron Devices Meeting, IEDM. 2022. 2022-December. 1911-1914
  • Noriyuki Miyata, Kyoko Sumita, Akira Yasui, Ryousuke Sano, Reito Wada, Hiroshi Nohira. Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance-voltage and hard X-ray photoelectron spectroscopy studies. Applied Physics Express. 2021. 14. 7. 071005-071005
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MISC (137)：
  • 桐原芳治, 和田励虎, 辻口良太, 保井晃, 宮田典幸, 野平博司. Elucidation of Interface Dipole Modulation Mechanism by Hard X-ray Photoemission Spectroscopy. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 桐原芳治, 辻口良太, 保井晃, 宮田典幸, 野平博司. Confirmation of Interface Dipole Modulation Generation by Hard X-ray Photoemission Spectroscopy. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
  • 宮田 典幸, 奈良 純, 山崎 隆浩, 住田 杏子, 佐野 良介, 野平 博司. 招待講演 HfO2/SiO2 MOS積層構造中の界面ダイポール変調動作-シリコン材料・デバイス. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2019. 118. 429. 27-30
  • Noriyuki Miyata, Jun Nara, Takahiro Yamasaki, Kyoko Sumita, Ryousuke Sano, Hiroshi Nohira. Interface Dipole Modulation in HfO 2 /SiO 2 MOS Stack Structures. Technical Digest - International Electron Devices Meeting, IEDM. 2019. 2018-December. 7.6.1-7.6.4
  • 宮田典幸, 奈良純, 山崎隆浩, 住田杏子, 佐野良介, 野平博司. HfO2/SiO2 MOS積層構造中の界面ダイポール変調動作. 電子情報通信学会技術研究報告. 2019. 118. 429(SDM2018 81-90)
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Patents (16)：
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