Rchr
J-GLOBAL ID：201801015074162784   Update date: Jul. 17, 2024

Yamashita Yoshiyuki

Yamashita Yoshiyuki
Affiliation and department：
National Institute for Materials Science

About National Institute for Materials Science


Other affiliations (1)：
Homepage URL  (1)： http://www.researcherid.com/rid/H-2704-2011
Research field  (6)： Composite materials and interfaces ,  Organic functional materials ,  Nanostructure physics ,  Applied materials ,  Quantum beam science ,  Optical engineering and photonics
Research keywords  (6)： 硬X線光電子分光 ,  光電子分光 ,  パワー半導体 ,  表面物理 ,  オペランド分光 ,  界面物性
Research theme for competitive and other funds  (11)：
  • 2011 - 2015 Electronic states and electric properties under device operation
  • 2008 - 2009 電圧印加硬X線光電子分光法による電極/分子界面の伝導機構の解明
  • 2005 - 2009 Making the well-defined contacts between molecules and substrates in nm scale and their electronic properties
  • 2004 - 2005 Electronic properties of single and arranged organic molecules on semiconductor surfaces
  • 2001 - 2002 分子構造をメモリに利用した1nmスケールメモリーの創成
Show all
Papers (196)：
  • Yuhua Tsai, Jingmin Tang, Yoshiyuki Yamashita. X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001). ACS Applied Electronic Materials. 2023. 5. 7. 3843-3850
  • Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, et al. Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN. ACS Applied Electronic Materials. 2022. 4. 9. 4719-4723
  • Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, et al. Erratum: Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN (ACS Appl. Electron. Mater. (2022) 4 : 9 (4719-4723) DOI: 10.1021/acsaelm.2c00912). ACS Applied Electronic Materials. 2022
  • Jingmin Tang, Yoshiyuki Yamashita. Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN. ACS Applied Electronic Materials. 2021. 3. 10. 4618-4622
  • WATANABE Yoshihide, YAMASHITA Yoshiyuki. Purpose of this Special Issue : "Vacuum and Surface Science of Films". Vacuum and Surface Science. 2021. 64. 4. 154-155
ｍore...
MISC (107)：
ｍore...
Books (3)：
  • フォトレジストの最先端技術
    2022
  • ポストシリコン半導体-ナノ成膜ダイナミクスと基盤・界面効果
    2013
  • エッセンシャル化学辞典
    東京化学同人 1999
Education (2)：
  • 1994 - 1998 Osaka University
  • 1990 - 1994 Osaka University School of Engineering Science Direct Affiliates
Professional career (1)：
  • 理学博士 (大阪大学)
Work history (6)：
  • 2015/04 - 現在 National Institute for Materials Science
  • 2010/04 - 現在 Kyushu University Graduate School of Engineering
  • 2007/02 - 2015/03 National Institute for Materials Science
  • 2011/11 - 2012/10 CEA-LETI フランス 客員教授
  • 1998/04 - 2007/01 The University of Tokyo The Institute for Solid State Physics
Show all
Committee career (6)：
  • 2016/04 - 現在 日本表面真空学会 編集委員
  • 2014/04 - 現在 日本学術振興会 151委員
  • 2014/02 - 2016/06 MRS 実行委員
  • 2014/03 - 2016/03 日本金属学会 編集委員
  • 2014/02 - 2015/11 International Conference on Solid State Devices and Materials stearing
Show all
Awards (4)：
  • 2021/10 - APS plenary talk APS2021
  • 2020/11 - 表面分析研究会 パウエル賞
  • 2005/11 - The Best Poster Award at 4th International Symposium on Surface Science and Nanotechnology
  • 1996/03 - 楠本賞
Association Membership(s) (2)：
THE JAPAN SOCIETY OF APPLIED PHYSICS ,  日本表面真空学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page

TOP

BOTTOM