Rchr
J-GLOBAL ID:200901002706007475   Update date: Oct. 15, 2024

Suzuki Toshimasa

スズキ トシマサ | Suzuki Toshimasa
Homepage URL  (1): http://leo.nit.ac.jp/~tsuzuki/index.htm
Research field  (3): Electric/electronic material engineering ,  Crystal engineering ,  Applied materials
Research keywords  (8): 光デバイス ,  電子デバイス ,  エピタキシャル成長 ,  窒化物半導体 ,  Opto-Devices ,  Electronic Devices ,  Epitaxial Growth ,  Nitride Semiconductors
Research theme for competitive and other funds  (5):
  • ワイドバンドギャップ半導体のデバイス応用に関する研究
  • 半導体超格子の成長と評価に関する研究
  • Research on Device Application of Wide-Bandgap Semiconductors.
  • Study on Device Application of Wide-Bandgap Semiconductors
  • Study on Growth and Characterization of Semiconductor Superlattices.
MISC (24):
Books (1):
  • Observation of the Early Stages and 3D-2D Transition of MOCUD Grown GaN with LT-GaN Buffer Layer.
    Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 2001
Education (4):
  • - 1979 Tokyo Institute of Technology Interdisciplinary Science and Engineering
  • - 1979 Tokyo Institute of Technology Graduate School, Division of Integrated Science and Engineering Electrochemistry Major
  • - 1973 Tokyo Institute of Technology School of Engineering
  • - 1973 Tokyo Institute of Technology Faculty of Engineering Department of Electrochemistry
Professional career (2):
  • (BLANK) (Tokyo Institute of Technology)
  • (BLANK) (Tokyo Institute of Technology)
Work history (3):
  • 1993 - 2002 Nippon Institute of Technology Faculty of Engineering
  • 1993 - 2002 Professor, Faculty of Engineering,
  • Nippon Institute of Technology.
Association Membership(s) (5):
Materials Research Society ,  アメリカ真空学会(American Vacuum Society) ,  日本表面科学会 ,  日本結晶成長学会 ,  応用物理学会
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