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J-GLOBAL ID：200902273955432183   Reference number：05A0771229

Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs

独立DG MOSFETのための実証,解析及びデバイス設計考察

Author (12)： MASAHARA Meishoku (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  LIU Yongxun (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  SAKAMOTO Kunihiro (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  ENDO Kazuhiko (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  ISHII Kenichi (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  SEKIGAWA Toshihiro (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  YAMAUCHI Hiromi (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  TANOUE Hisao (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  KANEMARU Seigo (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  KOIKE Hanpei (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  SUZUKI Eiichi (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
Material： IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)
Volume： 52  Issue： 9  Page： 2046-2053  Publication year： Sep. 2005 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,...

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JST classification (1)： Transistors  (NC03070N)

Terms in the title (5)： dG ,  MOSFET ,  実証 ,  解析 ,  デバイス設計