Device Design Consideration for V<sub>th</sub>-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

MASAHARA Meishoku; LIU Yongxun; SAKAMOTO Kunihiro; ENDO Kazuhiko; SEKIGAWA Toshihiro; MATSUKAWA Takashi; SUZUKI Eiichi

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J-GLOBAL ID：200902260734763466 Reference number：05A0535197

Device Design Consideration for V_th-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

V_th制御可能な4端子2重ゲートMOSFETに関する素子設計の考察

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Material：
Volume： 44 Issue： 4B Page： 2351-2356 Publication year： Apr. 30, 2005
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

Reference (13)：

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2) J. P. Denton and G. W. Neudeck: Proc. IEEE SOI Conf. (1995) p. 135.
3) I. Y. Yang, C. Vieri, A. Chandrakasan and D. A. Antoniadis: IEEE Trans. Electron Devices 44 (1997) 822.
4) H.-S. P. Wong, D. J. Frank and P. M. Solomon: Tech. Dig. Int. Electron Device Meet. (1998) p. 407.
5) K. W. Guarini et al.: Tech. Dig. Int. Electron Device Meet. (2001) p. 425.

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Device Design Consideration for Vth-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Device Design Consideration for V_th-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor