Rchr
J-GLOBAL ID:200901046847734696
Update date: Jan. 30, 2024
Katsuhiro Uesugi
ウエスギ カツヒロ | Katsuhiro Uesugi
Affiliation and department:
Research field (1):
Electric/electronic material engineering
Research keywords (2):
半導体
, 電子材料、半導体
Research theme for competitive and other funds (22):
- 2010 - 2012 量子情報通信用のInGaSb系正孔局在型量子ドット構造の開発
- 2009 - 2011 Study on Electron-photon Quantum-state Conversion in Quantum Dots Embedded in Meta Microcavities
- 2005 - 2008 Single-Photon Generation and Detection and Its Conversion to Electron Spin States for Quantum Information Applications
- 2004 - 2008 Study on coherent control of exciton states in quantum dots embeddedin pyramidal microcavities
- 2003 - 2005 新しいGaNAsSe半導体混晶による波長1.5μm帯広帯域光通信用光源の開発
- 2003 - 2004 半導体3次元微小光共振器を用いた単一光子による量子位相変調の研究
- 2002 - 2003 Study of Large Purcell Effect in Three-dimensional microcavities
- 2002 - 2003 可視・赤外波長域での多波長同時発光デバイスとその集積化の研究
- 2001 - 2001 可視・赤外波長域での多波長同時発光デバイスとその集積化の研究
- 2000 - 2001 Control of Spontaneous Emission from Selectively Grown Semiconductor Photonic Dots
- 1998 - 2000 Development of AFM-SEM Coupled Lithography for Fabricating Nano Optical Devices
- 1998 - 1999 ワイドギャップ半導体光強閉じ込め系での励起子-フォトン相互作用の研究
- 1997 - 1999 Fabrication of quantum dots with visible light emission and study of its stimulated emission
- 1998 - 1998 ワイドギャップ半導体を用いた単電子ナノ構造の作製とその集積化に関する基礎研究
- 1997 - 1998 MOVPE法によるZnSe/MgS量子井戸箱の試作研究
- 1997 - 1997 ワイドギャップ半導体を用いた単電子ナノ構造の作製とその集積化に関する基礎研究
- 1996 - 1997 室温エキシトンによる青色微小光共振器の研究
- 1995 - 1997 Research on Blue Semiconductor Lasers Based on MOCVD
- 1996 - 1996 ZnSe量子井戸箱の作製技術の開発
- 1995 - 1996 Excitonic optical transition in a new II-VI semiconductor superlattice
- 1994 - 1994 量子化された場におけるエキシトン・フォノン、エキシトン・フォトン相互作用の研究
- 1992 - 1994 Study of High-Performance Blue Semiconductor Lasers Based on Localized Excitons
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Papers (125):
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Muhammad Hafiz Abu Bakar, Lam Mui Li, Khairul Anuar Mohamad, Fouziah Md. Yassin, Chee Fuei Pien, Afishah Alias, Katsuhiro Uesugi. Annealing dependence on structural and electrical characteristic of n-ZnO/p-CuGaO2 transparent heterojunction diode. Advanced Science Letters. 2017. 23. 11. 11564-11566
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Muhammad Hafiz Abu Bakar, Lam Mui Li, Khairul Anuar Mohamad, Fouziah Md. Yassin, Chee Fuei Pien, Afishah Alias, Katsuhiro Uesugi. Annealing dependence on structural and electrical characteristic of n-ZnO/p-CuGaO2 transparent heterojunction diode. Advanced Science Letters. 2017. 23. 11. 11564-11566
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Mui Li Lam, Muhammad Hafiz Abu Bakar, Wai Yip Lam, Afishah Alias, Abu Bakar Abd Rahman, Khairul Anuar Mohamad, Katsuhiro Uesugi. Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method. EPJ Web of Conferences. 2017. 162
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Yuki Shimomura, Yosuke Igarashi, Shinji Kimura, Yuhei Suzuki, Yoshihiro Tada, Hisashi Fukuda, Katsuhiro Uesugi. Metal-organic molecular beam epitaxy of GaAsNSe films using Ga droplets on GaP(001). JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 8
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小川 健吾, 鳥越 俊彦, 澤田 研, 岩佐 達郎, 永野 宏治, 柴山 義行, 夛田 芳広, 植杉 克弘, 福田 永. 液相中への縦波放射を利用したレイリー型表面弾性波センサーの開発. 電気学会論文誌E(センサ・マイクロマシン部門誌). 2015. 135. 12. 490-495
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MISC (29):
Books (3):
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Dilute Nitride Semiconductors
Elsevier Ltd. 2004
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Advances in the Understanding of Crystal Growth Mechanisms
Elsevier Science B.V. 1997
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Growth and optical properties of wide-gap II-VI low dimensional semiconductors
Plenum Publishing Corporation 1989
Lectures and oral presentations (42):
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ナローバンドギャップCu2Oナノドット薄膜の作製
(日本ゾル-ゲル学会第21回討論会 2023)
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Growth of Nanosheet Structures on Gallium Oxide Hydroxide Gel Surfaces
(International Conference on Materials for Advance Technologies 2023)
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Effects of Annealing on Sol-gel Derived Cu2O Films
(International Conference on Materials for Advance Technologies 2023)
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Characterization of GaOOH Films Prepared by Two-dimensional Sol-gel Process
(THE 22ND INTERNATIONAL VACUUM CONGRESS IVC-22 2022)
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横方向ゾル-ゲル化反応により形成したGaOOHゲル膜上でのナノシートの自己組織成長
(日本ゾル-ゲル学会第20回討論会 2022)
more...
Association Membership(s) (4):
The Japanese Sol-Gel Society
, 日本表面真空学会
, 応用物理学会
, 日本表面科学会
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