Initial Breakdown of HfO<sub>2</sub> by Formation Process of Gate Electrode in Reduction Atmosphere

MIZUBAYASHI WATARU; OGAWA ARITO; NABATAME TOSHIHIDE; SATAKE HIDEKI; TORIUMI AKIRA; TORIUMI AKIRA; MIZUBAYASHI WATARU; OGAWA ARITO; NABATAME TOSHIHIDE; SATAKE HIDEKI; TORIUMI AKIRA

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J-GLOBAL ID：200902298754784130 Reference number：06A0590490

Initial Breakdown of HfO₂ by Formation Process of Gate Electrode in Reduction Atmosphere

還元雰囲気下でのゲート電極形成プロセスによるHfO₂膜の初期絶縁破壊

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Material：
Volume： 106 Issue： 108(SDM2006 42-64) Page： 107-111 Publication year： Jun. 14, 2006
JST Material Number： S0532B ISSN： 0913-5685 Document type： Proceedings
Article type：短報 Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Materials of solid-state devices , Measurement,testing and reliability of solid-state devices

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Initial Breakdown of HfO2 by Formation Process of Gate Electrode in Reduction Atmosphere

Initial Breakdown of HfO₂ by Formation Process of Gate Electrode in Reduction Atmosphere