Art

J-GLOBAL ID：200902280555376507   Reference number：05A0624507

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

キャリア分離法を用いたhigh-k stackゲート絶縁膜のキャリア伝導及び絶縁性劣化機構の解析

Author (10)： MIZUBAYASHI WATARU (半導体MIRAI-産総研ASRC) ,  YASUDA NAOKI (半導体MIRAI-ASET) ,  OKADA KENJI (半導体MIRAI-ASET) ,  OTA HIROYUKI (半導体MIRAI-産総研ASRC) ,  HORIKAWA TSUYOSHI (半導体MIRAI-産総研ASRC) ,  IWAMOTO KUNIHIKO (半導体MIRAI-ASET) ,  NABATAME TOSHIHIDE (半導体MIRAI-ASET) ,  SATAKE HIDEKI (半導体MIRAI-ASET) ,  TORIUMI AKIRA (半導体MIRAI-産総研ASRC) ,  TORIUMI AKIRA (東大)
Material： 電気学会電子材料研究会資料  (電気学会研究会資料)
Volume： EFM-05  Issue： 22-34  Page： 19-24  Publication year： 2005 
JST Material Number： Z0970A  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *insulating film ,...
Semi thesaurus term： キャリア分離法 ,...

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JST classification (3)： Materials of solid-state devices  (NC03020K) ,  Insulating materials  (NA04030W) ,  Measurement,testing and reliability of solid-state devices  (NC03040G)

Reference (9)：

• CHANG, C. Quantum yield of electron impact ionization in silicon. J. Appl. Phys. 1985, 57, 302-309
• TAKAGI, S. Experimental evidence of inelastic tunneling in stress-induced leakage current. IEEE Trans. Electron Dev. 1999, 46, 335-341
• LOH, WY. Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation. Digest of the 2003 International Electron Devices Meeting, San Francisco, USA, 12. 2003, 927-930
• NABATAME, T. Design and proof of high quality HfAlO_X film formation for MOSCAPs and nMOSFETs through layer-by-layer deposition and annealing process. Digest of the 2003 Symposium on VLSI Technology, Kyoto, Japan, 6. 2003, 25-26
• MIYAZAKI, S. Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics. J. Vac. Sci. Technol. B. 2001, 19, 2212-2216

Terms in the title (6)： キャリア ,  分離法 ,  ゲート絶縁膜 ,  伝導 ,  絶縁性 ,  解析