Art

J-GLOBAL ID：200902261314723783   Reference number：03A0486565

The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

立方晶炭化けい素上に作製した金属-酸化物-半導体電界効果トランジスタに関する電気特性

Author (9)： OHSHIMA T (Japan Atomic Energy Res. Inst. (JAERI), Gunma, JPN) ,  LEE K K (Japan Atomic Energy Res. Inst. (JAERI), Gunma, JPN) ,  ISHIDA Y (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KOJIMA K (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TANAKA Y (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TAKAHASHI T (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YOSHIKAWA M (Japan Atomic Energy Res. Inst. (JAERI), Gunma, JPN) ,  OKUMURA H (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ARAI K (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 42  Issue： 6B  Page： L625-L627  Publication year： Jun. 15, 2003 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,...

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JST classification (1)： Transistors  (NC03070N)

Reference (14)：

• 1) T. Ohshima, M. Yoshikawa, H. Itoh, Y. Aoki and I. Nashiyama: Mater. Sci. & Eng. B <B>61–62</B> (1999) 480.
• 2) K. K. Lee, T. Ohshima and H. Itoh: IEEE Trans. Nucl. Sci. 50 (2003) 194.
• 3) G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das and J. W. Palmour: IEEE Electron Device Lett. 22 (2001) 176.
• 4) R. Kosugi, S. Suzuki, M. Okamoto, S. Harada, J. Senzaki and K. Fukuda: IEEE Electron Device Lett. 23 (2002) 136.
• 5) R. Schorner, P. Friedrichs and D. Peters: IEEE Trans. Electron Devices 46 (1999) 533.

Terms in the title (6)： 立方晶 ,  炭化けい素 ,  作製 ,  酸化物 ,  電界効果トランジスタ ,  電気特性