Art
J-GLOBAL ID：200902102847579217
Reference number：00A0283131
A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep-Ultraviolet Lithography. I. Limited Permeation of Si Compounds from Vapor Phase.
深紫外線リソグラフィーのための化学増幅を用いた表面をシリル化した単一層レジスト I 気相からのSi化合物の限定された浸透
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Author (5)：
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Material：
Volume：
39
Issue：
2A
Page：
669-674
Publication year：
Feb. 15, 2000
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Techniques for samples
, Manufacturing technology of solid-state devices
Reference (14)：
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1) S. A. MacDonald, H. Ito, H. Hiraoka and C. G. Willson: Proc. SPE Reg. Tech. Conf. Photopolymers, Ellenville, NY, 1985, p. 177.
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2) F. Coopmans and B. Roland: Proc. SPIE 631 (1986) 34.
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3) R. Sezi, M. Sebald, R. Leuschner, H. Ahne, S. Birkle and H. Borndorfer: Proc. SPIE 1262 (1990) 84.
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4) M. A. Hartney, R. R. Kunz, D. J. Ehrlich and D. C. Shaver: Proc. SPIE 1262 (1990) 119.
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5) M. A. Hartney, R. R. Kunz, L. M. Eriksen and D. C. La Tulipe: Proc. SPIE 1925 (1993) 270.
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