A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep-Ultraviolet Lithography. I. Limited Permeation of Si Compounds from Vapor Phase.

SUGITA K; IKAGAWA M; HARADA K; KUSHIDA M; SAITO K

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J-GLOBAL ID：200902102847579217 Reference number：00A0283131

A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep-Ultraviolet Lithography. I. Limited Permeation of Si Compounds from Vapor Phase.

深紫外線リソグラフィーのための化学増幅を用いた表面をシリル化した単一層レジスト I 気相からのSi化合物の限定された浸透

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Material：
Volume： 39 Issue： 2A Page： 669-674 Publication year： Feb. 15, 2000
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Techniques for samples , Manufacturing technology of solid-state devices

Reference (14)：

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3) R. Sezi, M. Sebald, R. Leuschner, H. Ahne, S. Birkle and H. Borndorfer: Proc. SPIE 1262 (1990) 84.
4) M. A. Hartney, R. R. Kunz, D. J. Ehrlich and D. C. Shaver: Proc. SPIE 1262 (1990) 119.
5) M. A. Hartney, R. R. Kunz, L. M. Eriksen and D. C. La Tulipe: Proc. SPIE 1925 (1993) 270.

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