Art
J-GLOBAL ID:200902119971035934   Reference number:02A0119430

CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits.

低電圧メモリ回路用の電圧ポンプ利得向上とゲート酸化物の低応力化を図ったCMOSチャージポンプ
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Material:
Volume: E85-C  Issue:Page: 225-229  Publication year: Jan. 01, 2002 
JST Material Number: L1370A  ISSN: 0916-8524  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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JST classification
Category name(code) classified by JST.
Power source circuit 

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