Effect of N<sub>2</sub> partial pressure on the structure of MgO thin films deposited by radio frequency-magnetron sputtering with single-crystal MgO target.

MISAKI Y; MIKAWA M; ISHIGURO T; HAMASAKI K

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J-GLOBAL ID：200902132657703198 Reference number：97A0239113

Effect of N₂ partial pressure on the structure of MgO thin films deposited by radio frequency-magnetron sputtering with single-crystal MgO target.

単結晶MgOターゲットを用いて高周波マグネトロンスパッタリングにより蒸着したMgO薄膜の構造に及ぼすN₂分圧の影響

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Author (4)： , , ,
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Volume： 15 Issue： 1 Page： 48-51 Publication year： Jan. 1997
JST Material Number： C0789B ISSN： 0734-2101 CODEN： JVTAD6 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films

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Effect of N2 partial pressure on the structure of MgO thin films deposited by radio frequency-magnetron sputtering with single-crystal MgO target.

Effect of N₂ partial pressure on the structure of MgO thin films deposited by radio frequency-magnetron sputtering with single-crystal MgO target.