Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs (311)A Substrate.

NOH J-H; ASAHI H; KIM S-J; GONDA S

Art

J-GLOBAL ID：200902136255290593 Reference number：98A0740939

Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs (311)A Substrate.

GaAs(311)A基板上のGaP/InP短周期超格子構造の成長による量子ドット構造の自己形成過程についての走査型トンネル顕微鏡観察による研究

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=98A0740939&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=98A0740939&from=J-GLOBAL&jstjournalNo=G0520B") }}

Author (4)： , , ,
Material：
Volume： 37 Issue： 6B Page： 3793-3795 Publication year： Jun. 1998
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=98A0740939&from=J-GLOBAL&jstjournalNo=G0520B") }}

Semiconductor-semiconductor contacts with Gr.13-15 element compounds

Reference (9)：

1) D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars and P. M. Petroff: Appl. Phys. Lett. 63 (1993) 3203
2) D. Bimberg, N. N. Ledenstov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M. H. Mao, V. M. Ustinov, A.Y. Egorov, A. Z. Zhukov, P. S. Kopev, Z. I. Alferov, S. S. Ruvimov, GoSele and J. Heydenreich: Jpn. J. Appl. Phys. 35 (1996) 1311
3) H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama and H. Ishigawa: Jpn. J. Appl. Phys. 35 (1996) L903
4) M. Kitamura, M. Nishioka, J. Oshinowo and Y. Arakawa: Appl. Phys. Lett. 66 (1995) 3663
5) S.J. Kim, H. Asahi, M. Takemoto, K. Asami, J. H. Noh and S. Gonda : J. Cryst. Growth175/176 (1997) 754.

ｍore...

, , , , , , , , , ,

Return to Previous Page