Art

J-GLOBAL ID：200902137709847411   Reference number：02A0127147

Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy.

Author (7)： MITATE T (Kyushu Univ., Fukuoka, JPN) ,  SONODA Y (Kyushu Univ., Fukuoka, JPN) ,  OKI K (Kyushu Univ., Fukuoka, JPN) ,  KUWANO N (Kyushu Univ., Fukuoka, JPN) ,  KUMAGAI Y (Kyushu Univ., Fukuoka, JPN) ,  MURAKAMI H (Tokyo Univ. Agriculture and Technol., Tokyo, JPN) ,  KOUKITU A (Tokyo Univ. Agriculture and Technol., Tokyo, JPN)
Material： Physica Status Solidi. A. Applied Research  (Phys Status Solidi A)
Volume： 188  Issue： 2  Page： 557-560  Publication year： Nov. 23, 2001 
JST Material Number： D0774A  ISSN： 0031-8965  Document type： Article
Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Terms in the title (2)： GaN ,  GaAs