Art

J-GLOBAL ID：200902146861847078   Reference number：00A0455569

Structure and Composition of ZnS Films Prepared by Radio-Frequency Magnetron Sputtering.

マグネトロンスパッタ法により作製したZnS膜の構造と組成

Author (6)： SUGAWARA TOMOAKI (北海道工技セ) ,  SHIMONO ISAO (北海道工技セ) ,  FUKUDA HISASHI (室蘭工大) ,  NISHINO MOTOKAZU (北海道職業能力開発短大) ,  YOSHINO MASAKI (北海道職業能力開発短大) ,  NOMURA SHIGERU (室蘭工大)
Material： 電気学会論文誌 A  (IEEJ Transactions on Fundamentals and Materials)
Volume： 120-A  Issue： 4  Page： 470-477  Publication year： Apr. 01, 2000 
JST Material Number： S0808A  ISSN： 0385-4205  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *magnetron sputtering ,...
Semi thesaurus term： pressure dependence

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JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Reference (15)：

• XIAN, H. Quantitative Analyses and Crystallographic Studies of ZnS:Mn Thin Films Prepared by R.F.Magnetron Reactive Sputtering. Thin Solid Films. 1994, 248, 2, 193-198
• BLACKMORE, J. M. The Structure of ZnS Thin Films Deposited by R.F.Sputtering. Thin Solid Films. 1991, 199, 2, 321-334
• WANG, C. W. The Relation between Luminous Properties and Oxygen Content in ZnS:TbOF Thin-film Electroluminescent Devices Fabricated by Radio-frequency Magnetron Sputtering Method. IEEE Trns.Electron devices. 1998, 45, 4, 757-762
• KAWAKAMI, Y. Characterization of Epitaxal ZnS Films Fabricated by Sputtering in Controlled H_2S Vapor. Surface Science. 1986, 168, 1/3, 571-576
• McCLEAN, I. P. Low Temperature Epitaxial Deposition of ZnS onto (100)Si by R.F.Magnetron Sputtering and Molecular Beam Epitaxy. J.Crystal Growth. 1994, 143, 3/4, 172-175

Terms in the title (4)： マグネトロンスパッタ法 ,  作製 ,  ZnS ,  組成