Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al<sub>2</sub>O<sub>3</sub> using atomic layer deposition.

HO M-Y; GONG H; WILK G D; GREEN M L; LIN W H; SEE A; LAHIRI S K; RAEISAENEN P I; GUSTAFSSON T

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J-GLOBAL ID：200902149198504020 Reference number：02A0941376

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al₂O₃ using atomic layer deposition.

原子層堆積によるHf基ゲート絶縁体におけるAl₂O₃添加の制御による結晶化の抑制

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Author (9)： , , , , , , , ,
Material：
Volume： 81 Issue： 22 Page： 4218-4220 Publication year： Nov. 25, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films

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Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition.

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al₂O₃ using atomic layer deposition.