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J-GLOBAL ID：200902149198504020
Reference number：02A0941376 Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition.
原子層堆積によるHf基ゲート絶縁体におけるAl2O3添加の制御による結晶化の抑制
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HO M-Y
About HO M-Y
(National Univ. Singapore, SGP)
, About National Univ. Singapore, SGP
GONG H
About GONG H
(National Univ. Singapore, SGP)
, About National Univ. Singapore, SGP
WILK G D
About WILK G D
(Agere Systems, New Jersey)
, About Agere Systems, New Jersey
GREEN M L
About GREEN M L
(Agere Systems, New Jersey)
, About Agere Systems, New Jersey
LIN W H
About LIN W H
(Chartered Semiconductor Manufacturing Ltd., Singapore, SGP)
, About Chartered Semiconductor Manufacturing Ltd., Singapore, SGP
SEE A
About SEE A
(Chartered Semiconductor Manufacturing Ltd., Singapore, SGP)
, About Chartered Semiconductor Manufacturing Ltd., Singapore, SGP
LAHIRI S K
About LAHIRI S K
(Inst. Materials Res. and Engineering, Singapore, SGP)
, About Inst. Materials Res. and Engineering, Singapore, SGP
RAEISAENEN P I
About RAEISAENEN P I
(ASM America Inc., Arizona)
, About ASM America Inc., Arizona
GUSTAFSSON T
About GUSTAFSSON T
(Rutgers Univ., New Jersey)
About Rutgers Univ., New Jersey
Material：
Applied Physics Letters
(Appl Phys Lett)
About Applied Physics Letters
Volume： 81 Issue： 22 Page： 4218-4220 Publication year： Nov. 25, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type： 短報 Country of issue： United States (USA) Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
MOS structure
,...
About MOS structure
JST classification (1)：
JST classification
Category name(code) classified by JST.
Oxide thin films
Category name(code) classified by JST.
(BK14050P)
About Oxide thin films
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
Keywords automatically extracted from the title.
原子層堆積
, About 原子層堆積
HF
, About HF
ゲート絶縁体
, About ゲート絶縁体
Al2O3
, About Al2O3
結晶化
About 結晶化
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