Art
J-GLOBAL ID：200902156251718751   Reference number：01A0078747

Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy.

水素化物気相エピタクシーによる自立GaN基板
Author (3)：
PARK S S

About PARK S S

(Samsung Advanced Inst. Technol., Suwon,KOR)

About Samsung Advanced Inst. Technol., Suwon,KOR

, 
PARK I-W

About PARK I-W

(Korea Univ., Seoul, KOR)

About Korea Univ., Seoul, KOR

, 
CHOH S H

About CHOH S H

(Korea Univ., Seoul, KOR)

About Korea Univ., Seoul, KOR


Material：
Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)

About Japanese Journal of Applied Physics. Part 2. Letters


Volume： 39  Issue： 11B  Page： L1141-L1142  Publication year： Nov. 15, 2000 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*gallium nitride

About gallium nitride

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

,  Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Reference (7)：
ｍore...
Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
水素化物気相エピタクシー

About 水素化物気相エピタクシー

, 
自立

About 自立

, 
GaN

About GaN


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