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J-GLOBAL ID:200902156251718751   Reference number:01A0078747

Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy.

水素化物気相エピタクシーによる自立GaN基板
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Volume: 39  Issue: 11B  Page: L1141-L1142  Publication year: Nov. 15, 2000 
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Manufacturing technology of solid-state devices 
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