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J-GLOBAL ID：200902158249213084   Reference number：03A0050129

Fabrication of M³⁺-Substituted and M³⁺/V⁵⁺-Cosubstituted Bismuth Titanate Thin Films [M=lanthanoid] by Chemical Solution Deposition Technique.

化学溶液堆積法によるM³⁺置換,及び,M³⁺/V⁵⁺同時置換したチタン酸ビスマス薄膜の作製

Author (7)： UCHIDA H (Sophia Univ., Tokyo, JPN) ,  YOSHIKAWA H (Sophia Univ., Tokyo, JPN) ,  OKADA I (Sophia Univ., Tokyo, JPN) ,  MATSUDA H (National Inst. Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN) ,  IIJIMA T (National Inst. Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN) ,  WATANABE T (Tokyo Inst. Technol., Yokohama, JPN) ,  FUNAKUBO H (Tokyo Inst. Technol., Yokohama, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 41  Issue： 11B  Page： 6820-6824  Publication year： Nov. 30, 2002 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *lanthanum compound ,...
Semi thesaurus term： PZT

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JST classification (2)： Oxide thin films  (BK14050P) ,  Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B)

Reference (15)：

• 1) J. Celinska, V. Joshi, S. Narayan, L. D. Macmillan and C. A. Paz De Araujo: Integr. Ferroelectr. 30 (2001) 1.
• 2) S. E. Cummins and L. E. Cross: J. Appl. Phys. 39 (1968) 2268.
• 3) D. Wu, A. Li, T. Zhu, Z. Li, Z. Liu and N. Ming: J. Mater. Res. 16 (2001) 1325.
• 4) T. Watanabe, A. Saiki, K. Saito and H. Funakubo: J. Appl. Phys. 89 (2001) 3934.
• 5) B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee and W. Jo: Nature 401 (1999) 682.

Terms in the title (5)： 化学溶液堆積法 ,  置換 ,  チタン酸ビスマス ,  薄膜 ,  作製