Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy.

ISHIHARA Y; YAMAMOTO J; KURIMOTO M; TAKANO T; HONDA T; KAWANISHI H

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J-GLOBAL ID：200902166968193276 Reference number：00A0057095

Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy.

有機金属気相エピタクシーによって成長させた歪制御AlN薄層における結晶品質の残留歪依存性

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Material：
Volume： 38 Issue： 11B Page： L1296-L1298 Publication year： Nov. 15, 1999
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films

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