Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate.

NOH J-H; ASAHI H; FUDETA M; WATANABE D; MORI J; GONDA S

Art

J-GLOBAL ID：200902170616264227 Reference number：99A0497757

Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate.

GaAs(311)A基板上に成長させたGaP/InP短周期超格子における量子ドット構造自己形成過程の成長温度依存性

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Volume： 38 Issue： 4B Page： 2521-2523 Publication year： Apr. 30, 1999
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Semiconductor-semiconductor contacts with Gr.13-15 element compounds

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