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Radial distribution of temperature gradients in growing CZ-Si crystals and its application to the prediction of microdefect distribution.
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About KITAMURA K
About Sumitomo Mitsubishi Silicon Corp., Saitama, JPN
About FURUKAWA J
About Sumitomo Mitsubishi Silicon Corp., Saitama, JPN
About NAKADA Y
About Sumitomo Mitsubishi Silicon Corp., Saitama, JPN
About ONO N
About Sumitomo Mitsubishi Silicon Corp., Saitama, JPN
About SHIMANUKI Y
About Sumitomo Mitsubishi Silicon Corp., Saitama, JPN
About EIDENZON A M
About Podolsk Chemical-Metallurgical Plant, Moscow Region, RUS
About PUZANOV N I
About Podolsk Chemical-Metallurgical Plant, Moscow Region, RUS
About PUZANOV D N
About Podolsk Chemical-Metallurgical Plant, Moscow Region, RUS
Material：
About Journal of Crystal Growth
Volume： 242 Issue： 3/4 Page： 293-301 Publication year： Jul. 2002
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type： 原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)
Keywords indexed to the article.
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About single crystal
Category name(code) classified by JST.
About Crystal growth of semiconductors
Keywords automatically extracted from the title.
About Si結晶
About 成長
About 温度勾配
About 動径分布
About 微小
About 欠陥
About 分布
About 予測
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