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J-GLOBAL ID:200902189287921460   Reference number:01A0772376

A New Sample Structure for Position-Controlled Giant-Grain Growth of Silicon using Phase-Modulated Excimer-Laser Annealing.

位相変調エキシマレーザアニーリングを利用したシリコンの位置制御巨大粒成長のための新しい試料構造
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Volume: 40  Issue:Page: 4466-4469  Publication year: Jul. 15, 2001 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Crystal growth of semiconductors  ,  Laser irradiation effects and damages 
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