Hydride Vapor Phase Epitaxy of GaN on NdGaO<sub>3</sub> Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale.

WAKAHARA A; YAMAMOTO T; ISHIO K; YOSHIDA A; SEKI Y; KAINOSHO K; ODA O

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J-GLOBAL ID：200902197638742349 Reference number：00A0544467

Hydride Vapor Phase Epitaxy of GaN on NdGaO₃ Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale.

NdGaO₃基板上のGaNの水素化物気相エピタクシーと2インチスケールの自立したGaNウエハの実現

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Author (7)： , , , , , ,
Material：
Volume： 39 Issue： 4B Page： 2399-2401 Publication year： Apr. 30, 2000
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films

Reference (6)：

1) S. Nakamura and G. Falso: The Blue Laser Diode (Springer-Verlag, Berlin, 1997).
2) For example, Ed. J. H. Edger: Properties of Group III Nitrides (INSPEC, 1994) Chap. 1.
3) A. Usui, H. Sunakawa, A. Sakai and A. A. Yamaguchi: Jpn. J. Appl. Phys. 36 (1997) L899.
4) H. Okazaki, A. Arakawa, T. Asahi, O. Oda and K. Aiki: Solid-State Electron. 41 (1997) 263.
5) A. Wakahara, T. Nishida, K. Kawano, A. Yoshida, Y. Seki and O. Oda: Proc. 10th Conf. on Semiconducting and Insulating Materials (Berkeley, USA, 1998) p. 33.

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Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale.

Hydride Vapor Phase Epitaxy of GaN on NdGaO₃ Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale.