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J-GLOBAL ID：200902215997116877   Reference number：06A0006195

Spatial fluctuation of dielectric properties in Hf-based high-k gate films studied by scanning capacitance microscopy

Hf基高kゲート絶縁膜の走査型容量顕微鏡で調べた誘電特性の空間ゆらぎ

Author (8)： NAITOU Y. (Nanoelectronics Res. Inst., National Inst. of Advanced Industrial Sci. and Technol. (AIST), Umezono 1-1-1, Tsukuba ...) ,  ANDO A. (Nanoelectronics Res. Inst., National Inst. of Advanced Industrial Sci. and Technol. (AIST), Umezono 1-1-1, Tsukuba ...) ,  OGISO H. (Advanced Manufacturing Res. Inst., National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-2-1 Namiki ...) ,  KAMIYAMA S. (Semiconductor Leading Edge Technologies (Selete), Inc., 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, JPN) ,  NARA Y. (Semiconductor Leading Edge Technologies (Selete), Inc., 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, JPN) ,  NAKAMURA K. (Semiconductor Leading Edge Technologies (Selete), Inc., 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, JPN) ,  WATANABE H. (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...) ,  YASUTAKE K. (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 87  Issue： 25  Page： 252908-252908-3  Publication year： Dec. 19, 2005 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： MOSFET ,...
Semi thesaurus term： 走査型静電容量顕微鏡 ,...

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JST classification (3)： Dielectrics in general  (BM05010F) ,  Oxide thin films  (BK14050P) ,  Measuring techniques and equipments of dielectric properties  (BM05020Q)

Terms in the title (5)： HF ,  ゲート絶縁膜 ,  走査型容量顕微鏡 ,  誘電特性 ,  ゆらぎ