Art

J-GLOBAL ID：200902216297000360   Reference number：09A0189336

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Si基板上のSiC膜上に形成したエピタキシャルグラフェンのRaman散乱分光法

Author (12)： MIYAMOTO Yu (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  HANDA Hiroyuki (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  SAITO Eiji (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  KONNO Atsushi (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  NARITA Yuzuru (Dep. of Electrical Engineering, Yamagata Univ., JPN) ,  SUEMITSU Maki (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  SUEMITSU Maki (CREST, Japan Sci. and Technol. Agency, JPN) ,  FUKIDOME Hirokazu (Center for Interdisciplinary Res., Tohoku Univ., JPN) ,  ITO Takashi (Center for Interdisciplinary Res., Tohoku Univ., JPN) ,  YASUI Kanji (Dept. of Electrical Engineering, Nagaoka Univ. of Technol., JPN) ,  NAKAZAWA Hideki (Dept. of Materials Sci. and Technol., Hirosaki Univ., JPN) ,  ENDOH Tetsuo (Center for Interdisciplinary Res., Tohoku Univ., JPN)
Material： e-Journal of Surface Science and Nanotechnology (Web)  (表面科学とナノテクノロジー)
Volume： 7  Page： 107-109 (J-STAGE)  Publication year： 2009 
JST Material Number： U0016A  ISSN： 1348-0391  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *Graphite ,  Carbon ,  thin film ,  Raman scattering ,  silicon carbide ,  ultrathin film ,  *Raman spectrum ,  spectral analysis ,  blue shift ,  compressive stress ,  MBE growth ,  *heteroepitaxy ,  *graphene ,  carbon film

JST classification (2)： Inorganic compounds and elements in general  (CD01010D) ,  Thin films of other inorganic compounds  (BK14060A)

Substance index (1)： Methylsilane

Reference (21)：

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Terms in the title (5)： Si基板 ,  SiC ,  エピタキシャルグラフェン ,  Raman散乱 ,  分光法