Art
J-GLOBAL ID：200902226730138768
Reference number：03A0393041
Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
浅くドープした広がり領域を有するSchottkyソース/ドレインSOI MOSFET
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Author (3)：
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Material：
Volume：
42
Issue：
4B
Page：
2009-2013
Publication year：
Apr. 30, 2003
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures
Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
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