Art

J-GLOBAL ID：200902227026917596   Reference number：06A0217498

Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure

極低酸素分圧を用いたCu酸化物クリーニング技術

Author (6)： ENDO KAZUHIKO (産業技術総合研) ,  SHIRAKAWA NAOKI (産業技術総合研) ,  YOSHIDA YOSHIYUKI (産業技術総合研) ,  GOFUKU EISHI (産業技術総合研) ,  MINO TETSUYA (産業技術総合研) ,  SUZUKI EIICHI (産業技術総合研)
Material： 電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))
Volume： 105  Issue： 598(SDM2005 250-258)  Page： 25-29  Publication year： Jan. 30, 2006 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： Partial Pressure ,...
Semi thesaurus term： CVD ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=06A0217498&from=J-GLOBAL&jstjournalNo=S0532B") }}

JST classification (3)： Manufacturing technology of solid-state devices  (NC03030V) ,  Unit process  (XE01040I) ,  Special machining  (QC04000Y)

Reference (8)：

• BOHR, M. T. Interconnect scaling-The real limiter to high performance ULSI. IEDM Tech. Dig., December, 1995. 1995, 241-244
• WONG, A. S. W. X-ray photoelectron spectroscopy and Auger electron spectroscopy investigation on the oxidation resistance of plasma-treated copper leadframes. J. Vac. Sci Technol A. 2000, 18, 4, 1619-1631
• APEN, E. X-ray photoelectron spectroscopy characterization of the oxidation of electroplated and sputter deposited copper surfaces. J. Vac. Sci. Technol. A. 1998, 16, 3, 1227-1232
• BAKLANOV, M. R. Characterization of Cu surface cleaning by hydrogen plasma. J. Vac. Sci. Technol B. 2001, 19, 4, 1201-1211
• SHAVIV, R. Barrier first RF-Ta as an alternative to Ar sputter-etch preclean for Cu metallization on W M1 and in single damascene integration. Adv. Metallization Conf. 2004 (AMC 2004). 2005, 781-785

Terms in the title (4)： 酸素分圧 ,  Cu ,  酸化物 ,  クリーニング