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J-GLOBAL ID:200902238574687851   Reference number:08A1183373

Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD

パルスモードホットメッシュCVD法による窒化物半導体のエピタキシャル成長
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Volume: 108  Issue: 269(CPM2008 75-88)  Page: 7-12  Publication year: Oct. 23, 2008 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Manufacturing technology of solid-state devices  ,  Materials of solid-state devices  ,  Techniques and equipment of thin film deposition 
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