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J-GLOBAL ID：200902261605883010   Reference number：06A0475013

Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

ウエット作製したSi(111):H表面上の個々のドーパント原子の走査型トンネル顕微鏡検出

Author (4)： NISHIZAWA M. (MIRAI, Advanced Semiconductor Res. Center, National Inst. of Advanced Industrial Sci. and Technol., 1-1 Higashi ...) ,  BOLOTOV L. (MIRAI, Advanced Semiconductor Res. Center, National Inst. of Advanced Industrial Sci. and Technol., 1-1 Higashi ...) ,  TADA T. (MIRAI, Advanced Semiconductor Res. Center, National Inst. of Advanced Industrial Sci. and Technol., 1-1 Higashi ...) ,  KANAYAMA T. (MIRAI, Advanced Semiconductor Res. Center, National Inst. of Advanced Industrial Sci. and Technol., 1-1 Higashi ...)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 24  Issue： 1  Page： 365-369  Publication year： Jan. 2006 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,...

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JST classification (2)： Lattice defects in semiconductors  (BK12040Q) ,  Microscopy determination of structures  (BK01040E)

Terms in the title (5)： 作製 ,  Si ,  ドーパント ,  原子 ,  走査型トンネル顕微鏡