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J-GLOBAL ID:200902293730862430   Reference number:07A1116380

Raman Scattering Studies of Electrically Active Impurities in in Situ B-Doped Silicon Nanowires: Effects of Annealing and Oxidation

その場Bドープけい素ナノワイヤ内の電気活性不純物のRaman散乱研究 アニーリング及び酸化の効果
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Volume: 111  Issue: 42  Page: 15160-15165  Publication year: Oct. 25, 2007 
JST Material Number: W1877A  ISSN: 1932-7447  CODEN: JPCCCK  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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Crystal growth of semiconductors  ,  Inorganic compounds and elements in general 

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