Art

J-GLOBAL ID：200902296281418252   Reference number：09A0372042

Structure-designable method to form super low-k SiOC film (k = 2.2) by neutral-beam-enhanced chemical vapour deposition

中性ビーム促進化学蒸着による超低k SiOC膜(k=2.2)を形成する構造設計法

Author (10)： YASUHARA Shigeo (Tohoku Univ., Sendai, JPN) ,  CHUNG Juhyun (Tohoku Univ., Sendai, JPN) ,  TAJIMA Kunitoshi (Semiconductor Technol. Academic Res. Center (STARC), Yokohama, JPN) ,  YANO Hisashi (Semiconductor Technol. Academic Res. Center (STARC), Yokohama, JPN) ,  KADOMURA Shingo (Semiconductor Technol. Academic Res. Center (STARC), Yokohama, JPN) ,  YOSHIMARU Masaki (Semiconductor Technol. Academic Res. Center (STARC), Yokohama, JPN) ,  MATSUNAGA Noriaki (Semiconductor Technol. Academic Res. Center (STARC), Yokohama, JPN) ,  KUBOTA Tomohiro (Tohoku Univ., Sendai, JPN) ,  OHTAKE Hiroto (Tohoku Univ., Sendai, JPN) ,  SAMUKAWA Seiji (Tohoku Univ., Sendai, JPN)
Material： Journal of Physics. D. Applied Physics  (J Phys D)
Volume： 42  Issue： 5  Page： 055208,1-7  Publication year： Mar. 07, 2009 
JST Material Number： B0092B  ISSN： 0022-3727  CODEN： JPAPBE  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： neutral beam ,  *silicon compound ,  oxide ,  carbide ,  *chemical vapor deposition ,  permittivity ,  silicon oxide ,  *dielectric thin film
Semi thesaurus term： neutral beam

JST classification (1)： Thin films of other inorganic compounds  (BK14060A)

Terms in the title (4)： 中性ビーム ,  促進 ,  化学蒸着 ,  設計法