Pat
J-GLOBAL ID:200903004527956529

電界効果型化合物半導体装置

Inventor:
Applicant, Patent owner:
Agent (1): 眞鍋 潔 (外3名)
Gazette classification:公開公報
Application number (International application number):2001164908
Publication number (International publication number):2002359256
Application date: May. 31, 2001
Publication date: Dec. 13, 2002
Summary:
【要約】【課題】 電界効果型化合物半導体装置に関し、GaN系化合物半導体装置のオン耐圧を高めるとともに、I-V特性を改善する。【解決手段】 Alx Ga1-x N(0y Ga1-y N(0≦y≦1、且つ、y Claim (excerpt):
Alx Ga1-x N(0y Ga1-y N(0≦y≦1、且つ、y IPC (3):
H01L 21/338 ,  H01L 29/778 ,  H01L 29/812
F-Term (17):
5F102FA01 ,  5F102GB01 ,  5F102GC01 ,  5F102GD01 ,  5F102GJ10 ,  5F102GL04 ,  5F102GM04 ,  5F102GM08 ,  5F102GN04 ,  5F102GN08 ,  5F102GQ01 ,  5F102GR04 ,  5F102GR10 ,  5F102GV08 ,  5F102HC01 ,  5F102HC10 ,  5F102HC15
Patent cited by the Patent:
Cited by applicant (5)
Show all
Cited by examiner (5)
Show all

Return to Previous Page