Art

J-GLOBAL ID：201002234578854820   Reference number：10A0389948

Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum

超高真空における市販水素化物気相エピタクシー及び有機金属化学蒸着基板からの清浄GaN(0001)を得るための表面処理

Author (4)： HATTORI Azusa N. (Res. Center for Ultra-Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Yamada-oka 2-1 ...) ,  ENDO Katsuyoshi (Res. Center for Ultra-Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Yamada-oka 2-1 ...) ,  HATTORI Ken (Graduate School of Materials Sci., Nara Inst. of Sci. and Technol., Takayama 8916-5, Ikoma, Nara 630-0192, JPN) ,  DAIMON Hiroshi (Graduate School of Materials Sci., Nara Inst. of Sci. and Technol., Takayama 8916-5, Ikoma, Nara 630-0192, JPN)
Material： Applied Surface Science  (Appl Surf Sci)
Volume： 256  Issue： 14  Page： 4745-4756  Publication year： May. 01, 2010 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *gallium nitride ,  compound semiconductor ,  *clean surface ,  surface treatment ,  ultra high vacuum ,  *MOCVD ,  *annealing (phenomenon) ,  low energy electron diffraction ,  scanning tunneling microscope ,  Auger electron spectroscopy ,  X-Ray Diffraction ,  secondary ion mass spectrometry ,  island structure ,  stoichiometry ,  surface roughness ,  surface reconstruction ,  surface contamination ,  crystal quality
Semi thesaurus term： *hydride vapor-phase epitaxy ,  イオンスパッタリング ,  Auger electron spectroscopy ,  temperature programmed desorption ,  X-ray photoelectron spectroscopy

JST classification (2)： Surface structure of semiconductors  (BK15030A) ,  Vapor plating  (WC08022K)

Terms in the title (5)： 高真空 ,  水素化物気相エピタクシー ,  有機金属化学蒸着 ,  GaN ,  表面処理