Art

J-GLOBAL ID：201202223298033832   Reference number：12A1165957

Electric Conduction in a Single GaN Nanocolumn

単一GaNナノカラムでの電気伝導

Author (8)： KATO Yuya (Dep. of Physics, Sophia Univ., JPN) ,  NAKATA Youhei (Dep. of Physics, Sophia Univ., JPN) ,  KUROE Haruhiko (Dep. of Physics, Sophia Univ., JPN) ,  SEKINE Tomoyuki (Dep. of Physics, Sophia Univ., JPN) ,  KIKUCHI Akihiko (Dep. of Electrical and Electronics Engineering, Sophia Univ., JPN) ,  KISHINO Katsumi (Dep. of Electrical and Electronics Engineering, Sophia Univ., JPN) ,  AOKI Nobuyuki (Graduate School of Advanced Integration Sci., Chiba Univ., JPN) ,  OCHIAI Yuichi (Graduate School of Advanced Integration Sci., Chiba Univ., JPN)
Material： e-Journal of Surface Science and Nanotechnology (Web)  (表面科学とナノテクノロジー)
Volume： 10  Page： 355-359 (J-STAGE)  Publication year： 2012 
JST Material Number： U0016A  ISSN： 1348-0391  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *gallium nitride ,  nanostructure ,  columnar crystal ,  *MBE growth ,  *radiofrequency discharge ,  Titanium ,  Aluminum ,  electrode material ,  silicon ,  substrate (plate) ,  photolithography ,  ohmic contact ,  *electrical conductivity ,  nonlinearity ,  magnetic reluctance ,  temperature dependence ,  current-voltage characteristic ,  plotting ,  numerical analysis ,  *hopping conduction ,  silicon dioxide ,  Arrhenius plot ,  modification
Semi thesaurus term： silica ,  *RF-MBE ,  nanocolumn ,  computational analysis ,  molecular beam epitaxy

JST classification (4)： Salts  (CD01050V) ,  Electric conduction in crystalline semiconductors  (BM03043X) ,  Crystal structure of other inorganic compounds  (BK07030J) ,  Crystal growth of semiconductors  (BK13040X)

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Terms in the title (3)： GaN ,  ナノカラム ,  電気伝導