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窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響
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About ARAI YUYA
About 埼玉大 大学院
About HOSHINO SHIN'YA
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About TAKAMIYA KENGO
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About ONABE KENTARO
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About 埼玉大 大学院
Material：
About 応用物理学関係連合講演会講演予稿集(CD-ROM)
Volume： 59th Page： ROMBUNNO.17P-DP3-13 Publication year： Feb. 29, 2012
JST Material Number： Y0054B Document type： Proceedings
Article type： 短報 Country of issue： Japan (JPN) Language： JAPANESE (JA)
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About gallium arsenide
About Nitrogen
About doping
About trapping center
About linearly polarized light
About photoluminescence
About light source
About infrared emission spectrum
About compound semiconductor
About semiconductor thin film
About single photon source
About isoelectronic trap
About uniaxial stress
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
About microphotoluminescence
About uniaxial stress
Category name(code) classified by JST.
About Semiconductor thin films
About Luminescence of semiconductors
About Light sources
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About 窒素
About δドープ
About GaAs
About 窒素原子
About 等電子トラップ
About 一軸応力
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