Art

J-GLOBAL ID：201302263825516030   Reference number：13A1386779

Investigation of Trap Mechanisms Causing Random Telegraph Noise in Ultra-Scaled MOSFETs

微細電界効果トランジスタにおけるランダムテレグラフノイズを引き起こす欠陥機構の解明

Author (3)： CHEN Jiezhi (東芝) ,  HIRANO IZUMI (東芝) ,  MITANI YUICHIRO (東芝)
Material： 東芝レビュー  (Toshiba Review)
Volume： 68  Issue： 8  Page： 27-30  Publication year： Aug. 01, 2013 
JST Material Number： F0360A  ISSN： 0372-0462  CODEN： TORBA  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *FET ,  *noise (signal) ,  mechanism ,  image sensor ,  flash memory ,  insulating film ,  reliability (property) ,  CMOS Image Sensor ,  NAND flash memory
Semi thesaurus term： *random telegraph noise ,  *欠陥機構 ,  high reliability

JST classification (2)： Transistors  (NC03070N) ,  Metal-insulator-semiconductor structures  (BM03085X)

Reference (7)：

• (1) Goiffon, V. et al. Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors. IEEE Electron Device Letters. 32, 6, 2011, p.773 - 775.
• (2) Realov, S. et al. "Random telegraph noise in 45-nm CMOS: Analysis using an on-chip test and measurement system". International Electron Devices Meeting 2010. San Francisco, CA, USA, 2010-12, IEEE. 2010, p.28.2.1 - 28.2.4.
• (3) Nagumo, T. et al. "Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps". International Electron Devices Meeting 2010. San Francisco, CA, USA, 2010-12, IEEE. 2010, p.28.3.1 - 28.3.4.
• (4) Joe, S.-M. et al. Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String. IEEE Trans. Electron Devices 58, 1, 2011, p.67 - 73.
• (5) Kang, D. et al. 'A new approach of NAND flash cell trap analysis using RTN characteristics." 2011 Symposium on VLSI Technology. Honolulu, HI, USA, 2011-06, IEEE. 2011, p.206 - 207.

Terms in the title (4)： 微細 ,  電界効果トランジスタ ,  ランダムテレグラフノイズ ,  欠陥