Art

J-GLOBAL ID：201402295234759940   Reference number：14A0427623

4インチSiC基板のUVアシスト研磨に関する研究

Author (5)： SAKAMOTO TAKESHI (熊本大) ,  INAKI TAKUMI (熊本大) ,  ODA KAZUAKI (熊本大) ,  TOGE MUTSUMI (熊本大) ,  FUJITA TAKASHI (東京精密)
Material： 砥粒加工学会誌  (Abrasive Technology)
Volume： 58  Issue： 4  Page： 235-240  Publication year： Apr. 01, 2014 
JST Material Number： L0473A  ISSN： 0914-2703  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *silicon carbide ,  substrate (plate) ,  semiconductor device ,  power electronics ,  *polishing (machining) ,  *precision grinding ,  ultraprecision machining ,  *ultraviolet irradiation ,  synthetic mineral ,  Quartz ,  tool ,  oxide film ,  gas ,  atmosphere (environment) ,  concentration (ratio) ,  velocity ,  lapping ,  diamond tool ,  hexagonal system ,  silicon ,  surface roughness ,  *polished surface ,  ceramics ,  pipe classified by material ,  ceramic pipe ,  polishing tool ,  *ultraprecision polishing ,  polishing rate ,  *machining ,  conversion coating film
Semi thesaurus term： 4H-SiC ,  *UVアシスト研磨 ,  power device ,  polishing rate ,  oxygen enrichment ,  ambient gas

JST classification (2)： Manufacturing of ceramics and ceramic whiteware  (YC03020V) ,  Materials of solid-state devices  (NC03020K)

Reference (15)：

• H. YASHIRO, T. FUJIMOTO, N. OHTANI, T. HOSHINO, M. KATSUNO, T. AIGO, H. TSUGE, M. NAKABAYASHI, H. HIRANO and K. TATSUMI: Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications, Mater. Sci. Forrum, 819(2009)600.
• L. Zhou, V. Audurier, P. Pirouz and J. A. Powell: Chemomechanical Polishing of Silicon Carbide. J. Electrochem. Soc. 144, 6(1997), L161.
• C. Li, I. B. Bhat, R. Wang and J. Seiler: Electro-Chemical Mechanical Polishing of Silicon Carbide, J. Electron. Mater. 33, 5(2004)481.
• H. HARA, Y. SANO, H. MIMURA, K. ARIA, A. KUBOTA, K. YAGI and K. YAMAUCHI: Novel abrasive-free planarization of 4H-SiC (0001), Journal of Electronic Materials. 35, 8(2006)L11.
• K. YAMAUCHI, Y. SANO, K. ARIMA: Smoothing of Single Crystalline SiC and GaN by Catalyst Referred Etching, J. Jpn. Soc. Precision Eng., 78, 11(2012)947(in Japanese).

Terms in the title (4)： SiC基板 ,  アシスト ,  研磨 ,  研究