Rchr
J-GLOBAL ID：201601020411395663
Update date: Apr. 13, 2024
Fujino Masahisa
Fujino Masahisa
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Research field (1)：
Electronic devices and equipment
Research theme for competitive and other funds (3)：
2023 - 2026 原子層堆積ハイブリッド表面の局所ダイナミクスの解明と3Dヘテロデバイスへの応用
2014 - 2017 Transferring Graphene to glass substrate using self-assembled monolayer and nano-adhesion layer
2014 - 2017 Development of Low Temperature Bonding Method by Formic Acid Treatment using Pt Catalyst
Papers (89)：
Masahisa Fujino, Kenji Takahashi, Katsuya Kikuchi, Tetsuya Ueda, Noboru Miyata, Tsukasa Miyazaki. Interfacial analysis of bonded SiCn interfaces by neutron reflectometry. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. 2021. 10
Pei Wen Chou, Jenn Ming Song, Zong Yu Xie, Masatake Akaike, Tadatomo Suga, Masahisa Fujino, Jing Yuan Lin. Low temperature de-oxidation for copper surface by catalyzed formic acid vapor. Applied Surface Science. 2018. 456. 890-898
Kai Takeuchi, Masahisa Fujino, Yoshiie Matsumoto, Tadatomo Suga. Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer. Japanese Journal of Applied Physics. 2018. 57. 4
Kai Takeuchi, Masahisa Fujino, Yoshiie Matsumoto, Tadatomo Suga. Room temperature bonding and debonding of polyimide film and glass substrate based on surface activate bonding method. Japanese Journal of Applied Physics. 2018. 57. 2
Masahisa Fujino, Hidenori Terasaka, Tadatomo Suga. Bonding and transferring of carbon nanotube bumps using magnetron sputtering. Japanese Journal of Applied Physics. 2018. 57. 2
ｍore...
MISC (8)：
Naoteru Shigekawa, Hideki Takagi, Masahisa Fujino, Eiji Higurashi, Nobuhiko Nishiyama, Takehito Shimatsu, Noriaki Toyoda. Low Temperature Bonding for 3D Integration FOREWORD. JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59
Cu/Dielectric Hybrid Bonding by Using Combined Surface Activated Bonding Method. 2016. 26. 299-302
Combined Surface-Activated Bonding (SAB) Technology for Low-Temperature Wafer Bonding for 3D Integration. 2015. 25. 321-324
Direct bonding of SiC by modified surface activated bonding method. 2014. 24. 175-178
Combined Surface-Activated Bonding Process for Novel Void-Free Hydrophilic Bonding Approach. 2014. 24. 271-274
ｍore...
Professional career (1)：
博士(工学) (東京大学)
Work history (5)：
2023/10 - 現在 National Institute of Advanced Industrial Science and Technology
2020/04 - 2023/09 National Institute of Advanced Industrial Science and Technology
2017/10 - 2020/03 National Institute of Advanced Industrial Science and Technology
2007/12 - 2017/09 The University of Tokyo The Graduate School of Engineering Department of Precision Engineering
2005/10 - 2007/11 Fraunhofer Institute IZM Environmental Engineering Department Guest Researcher
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