Select basic information for advanced search
| Free word |
|---|
| Copy service |  |
|---|---|
| Related links |  |
| Publisher site |  |
バンドギャップエネルギーを制御したInAs量子ドットを含む中間バンド型GaAs太陽電池の特性比較
ClipsAbout IKEDA RISA
About HAYASHI YUUMA
About OZAKI NOBUHIKO
About OSATO HIROTAKA
About 物質・材料研究機構
About WATANABE EIICHIRO
About 物質・材料研究機構
About IKEDA NAOKI
About 物質・材料研究機構
About SUGIMOTO YOSHIMASA
About 物質・材料研究機構
Material：
About 応用物理学会秋季学術講演会講演予稿集(CD-ROM)
Volume： 77th Page： ROMBUNNO.14p-P21-26 Publication year： Sep. 01, 2016
JST Material Number： Y0055B ISSN： 2758-4704 Document type： Proceedings
Article type： 短報 Country of issue： Japan (JPN) Language： JAPANESE (JA)
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
About solar cell
About band gap
About quantum dot
About indium arsenide
About gallium arsenide
About energy dependence
About MBE growth
About PIN junction
About electroluminescence
About spectral line shift
About film thickness
About intermediate band solar cell
About band gap energy
About film thickness dependence
Semi thesaurus term：
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
About molecular beam epitaxy
About photocurrent spectroscopy
About strain relaxation
Category name(code) classified by JST.
About Solar cell
Keywords automatically extracted from the title.
About バンドギャップエネルギー
About InAs量子ドット
About 中間バンド
About GaAs
About 太陽電池
Return to Previous Page
