Rchr
J-GLOBAL ID:201701016873688615   Update date: Sep. 01, 2020

GOTOW Takahiro

ゴトウ タカヒロ | GOTOW Takahiro
Affiliation and department:
Job title: 助教
Research field  (3): Thin-film surfaces and interfaces ,  Electric/electronic material engineering ,  Electronic devices and equipment
Research keywords  (3): TCADシミュレーション ,  MOS界面評価 ,  半導体デバイス
Papers (13):
MISC (11):
Lectures and oral presentations  (11):
  • Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile
    (2018 International Conference on Solid State Device and Materials 2018)
  • Performance enhancement of Si MOSFETs using anti-ferroelectric thin films as gate insulators
    (2018 International Conference on Solid State Device and Materials 2018)
  • Ultra-Low Power III-V-Based Mosfets and Tunneling FETs
    (233rd Electrochemical Society (ECS) Meeting, H02 - Advanced CMOS-Compatible Semiconductor Devices 18 2018)
  • III-V/Ge-based tunneling MOSFET
    (5th Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S) 2017)
  • Low Power Tunneling FET Technologies Using Ge/III­V Materials
    (232nd Electrochemical Society (ECS) Meeting, G03: Semiconductor Process Integration 10 2017)
more...
Education (3):
  • 2015 - 2018 The University of Tokyo
  • 2013 - 2015 Tokyo University of Science
  • 2009 - 2013 Tokyo University of Science
Professional career (1):
  • 博士(工学) (東京大学)
Work history (3):
  • 2019/07 - 現在 Tokyo Institute of Technology Dept.Electrical and Electronic Eng. Assistant Professor
  • 2018/04 - 2019/06 National Institute of Information and Communications Technology (NICT) Frontier Research Laboratory Advanced ICT Research Institute Researcher
  • 2017/04 - 2018/03 日本学術振興会 特別研究員(DC2)
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