Research field (3)：
Thin-film surfaces and interfaces
, Electric/electronic material engineering
, Electronic devices and equipment
Research keywords (3)：
TCADシミュレーション
, MOS界面評価
, 半導体デバイス
Research theme for competitive and other funds (2)：
2021 - 2024 再成長技術を駆使した横型ナノシートチャネルトンネルFETの作製と解析
2021 - 2024 化合物半導体横方向ヘテロ接合の創成とその電子デバイスへの応用
Papers (20)：
Yoshikaze Ito, Seita Tamai, Takuya Hoshi, Takahiro Gotow, Yasuyuki Miyamoto. Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers. Japanese Journal of Applied Physics. 2023. 62. SC. SC1048-SC1048
T. Aota, A. Hayasaka, I. Makabe, S. Yoshida, T. Gotow, Y. Miyamoto. Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction. Japanese Journal of Applied Physics. 2021. 60. SC. SCCF06-SCCF06
M. Mitsuhara, T. Gotow, T. Hoshi, H. Sugiyama, M. Takenaka, S. Takagi. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates. Journal of Crystal Growth. 2021. 555. 125970-125970
Yasuyuki MIYAMOTO, Takahiro GOTOW. Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer. IEICE Transactions on Electronics. 2020. E103.C. 6. 304-307
Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile
(2018 International Conference on Solid State Device and Materials 2018)
Performance enhancement of Si MOSFETs using anti-ferroelectric thin films as gate insulators
(2018 International Conference on Solid State Device and Materials 2018)
Ultra-Low Power III-V-Based Mosfets and Tunneling FETs
(233rd Electrochemical Society (ECS) Meeting, H02 - Advanced CMOS-Compatible Semiconductor Devices 18 2018)
III-V/Ge-based tunneling MOSFET
(5th Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S) 2017)
Low Power Tunneling FET Technologies Using Ge/IIIV Materials
(232nd Electrochemical Society (ECS) Meeting, G03: Semiconductor Process Integration 10 2017)
2023/04 - 現在 National Institute of Advanced Industrial Science and Technology
2019/07 - 2023/03 Tokyo Institute of Technology Dept.Electrical and Electronic Eng. Assistant Professor
2018/04 - 2019/06 National Institute of Information and Communications Technology (NICT) Frontier Research Laboratory Advanced ICT Research Institute Researcher
