Art
J-GLOBAL ID:201702227814713563   Reference number:17A0953246

Time-domain charge pumping on silicon-on-insulator MOS devices

シリコンオンインシュレータMOSデバイスの時間領域電荷ポンピング
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Volume: 56  Issue:Page: 011303.1-011303.5  Publication year: Jan. 2017 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Transistors  ,  Measurement,testing and reliability of solid-state devices 
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