Art

J-GLOBAL ID：201702261180254400   Reference number：17A0955181

Bias temperature instability in tunnel field-effect transistors

トンネル電界効果トランジスタのバイアス温度不安定性

Author (14)： MIZUBAYASHI Wataru (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORI Takahiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  FUKUDA Koichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ISHIKAWA Yuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORITA Yukinori (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIGITA Shinji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  LIU Yongxun (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  O'UCHI Shinichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TSUKADA Junichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YAMAUCHI Hiromi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MASAHARA Meishoku (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ENDO Kazuhiko (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 56  Issue： 4S  Page： 04CA04.1-04CA04.8  Publication year： Apr. 2017 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  *instability ,  *MOSFET ,  insulating film ,  dielectric thin film ,  *surface level ,  voltage fluctuation ,  *tunnel effect
Semi thesaurus term： tunnel field effect transistor ,  bias temperature instability ,  High-k gate dielectric ,  interface state ,  Threshold voltage shift ,  interband tunneling

JST classification (3)： Electrical properties of interfaces in general  (BM03081H) ,  Transistors  (NC03070N) ,  Measurement,testing and reliability of solid-state devices  (NC03040G)

Reference (32)：

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Terms in the title (2)： トンネル電界効果トランジスタ ,  バイアス温度不安定性