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J-GLOBAL ID：201702289545503680   Reference number：17A0318065

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology

16/14nmノードFinFET技術のための高誘電率誘電体と金属ゲートを用いたSiGe選択エピタキシャルプロセス統合の研究【Powered by NICT】

Author (16)： Wang Guilei (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Qin Changliang (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Yin Huaxiang (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Luo Jun (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Duan Ningyuan (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Yang Ping (Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore 117603, Singapore) ,  Gao Xingyu (Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, PR China) ,  Yang Tao (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Li Junfeng (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Yan Jiang (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Zhu Huilong (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Wang Wenwu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Chen Dapeng (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Ye Tianchun (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Zhao Chao (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China) ,  Radamson Henry H. (Department of Integrated Devices and Circuits, KTH Royal Institute of Technology, Isafjordsgatan 22-26, 16440 Kista, Sweden)
Material： Microelectronic Engineering  (Microelectron Eng)
Volume： 163  Page： 49-54  Publication year： 2016 
JST Material Number： C0406B  ISSN： 0167-9317  CODEN： MIENEF  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： In this study, the process int...

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Thesaurus term： fin (machine element) ,  *Germanium ,  growth rate ,  synchrotron radiation ,  characterization ,  heat balance ,  electrical resistivity ,  *silicon ,  *epitaxy ,  high aspect ratio ,  *process integration ,  *high dielectric constant
Semi thesaurus term： *シリコンゲルマニウム ,  *メタルゲート ,  *FinFET , 【Automatic Indexing@JST】

Author keywords (4)： FinFET ,  SiGe selective epitaxy ,  RPCVD ,  High-k & metal gate

JST classification (1)： Transistors  (NC03070N)

Terms in the title (9)： ノード ,  FinFET ,  高誘電率 ,  誘電体 ,  金属ゲート ,  SiGe ,  エピタキシャル ,  プロセス統合 ,  研究