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J-GLOBAL ID：201801011638920964   Update date: Sep. 20, 2025

Oishi Toshiyuki

オオイシ トシユキ | Oishi Toshiyuki
Affiliation and department：
Saga University Faculty of Science and Engineering Department of Electrical and Electronic Engineering

About Saga University Faculty of Science and Engineering Department of Electrical and Electronic Engineering


Homepage URL  (1)： http://www.ee.saga-u.ac.jp/sedlab/index.htm
Research field  (3)： Electronic devices and equipment ,  Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (10)： Wireless Power Transfer ,  Gallium Oxide ,  Diamond ,  Gallium Nitride ,  Wide Bandgap Semiconductor ,  Process technologies ,  Device modeling ,  Device and material characteristics ,  High frequency high power devices ,  Electronic devices
Research theme for competitive and other funds  (6)：
  • 2024 - 2027 2端子対回路評価による窒化ガリウムトラップの大信号における物理解明と回路モデル化
  • 2022 - 2025 Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate
  • 2022 - 2025 Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate
  • 2021 - 2024 Analysis of Physical Mechanism for GaN Semiconductors Traps by AC Two Port Network
  • 2019 - 2022 Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire Substrate
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Papers (181)：
  • Toshiyuki Oishi, Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka, Saga University. Study on drain bias dependence of Y-parameters under on-state condition in GaN HEMTs using low-frequency vector network analyzer and device simulation. Solid-State Electronics. 2025. 109245-109245
  • Niloy Chandra Saha, Tomoki Shiratsuchi, Masanori Eguchi, Toshiyuki Oishi, Makoto Kasu. Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation. Journal of Vacuum Science & Technology B. 2024
  • Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki, et al. Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography. Applied Physics Express. 2024. 17. 7. 071004-071004
  • Yutaro Yamaguchi, Keigo Nakatani, Shintaro Shinjo, Toshiyuki Oishi, Yasuyuki Miyamoto. Trapping Compensation for Transient Recovery in GaN LNAs. IEEE Transactions on Microwave Theory and Techniques. 2024. 72. 7. 4006-4016
  • Toshiyuki Oishi, Shiori Takada, Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka. Drain bias dependence of Y 22 and Y 21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors. Japanese Journal of Applied Physics. 2024. 63. 1. 010905-010905
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MISC (51)：
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Patents (153)：
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Books (2)：
  • 素子分離技術総論
    2000
  • 2000 半導体テクノロジー大全
    電子ジャーナル 2000
Lectures and oral presentations  (283)：
  • GaN HEMTの表面・ GaNトラップが低周波 Yパラメータのドレイン電圧依存性に与える影響(シミュレーション)
    (電子情報通信学会研究会 2025)
  • Si基板上 GaN-HEMTにおける基板中の RFリーク電流を考慮した半物理大信号モデル
    (電子情報通信学会研究会 2025)
  • AlGaN/GaN HEMTの表面トラップ位置が低周波Yパラメータに与える影響 (デバイスシミュレーション)
    (2024年度(第77回)電気・情報関係学会九州支部連合大会 2024)
  • 表面トラップ濃度がAlGaN/GaN構造の低周波Yパラメータに与える影響 (デバイスシミュレーション)
    (2024年度(第77回)電気・情報関係学会九州支部連合大会 2024)
  • ゲートラグ測定による低周波領域におけるAlGaN/GaN HEMTのトラップの周波数特性評価
    (2024年度(第77回)電気・情報関係学会九州支部連合大会 2024)
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Works (48)：
  • 窒化物半導体装置およびその製造方法
    2013 - 2013
  • Semiconductor device and manufacturing method thereof
    T.Oishi, Y.Yamamoto, H.Otsuka, K.Yamanaka, A.Inoue 2012 - 2012
  • 半導体装置の製造方法
    2012 - 2012
  • 窒化物半導体装置の製造方法
    2011 - 2011
  • Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
    T.Nanjo, M.Suita, Y.Abe, T.Oishi, Y.Tokuda 2011 - 2011
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Education (2)：
  • 1984 - 1986 Kyoto university Faculty of Engineerig Electrical Engineering
  • 1980 - 1984 Kyoto University Graduate School of Engineerigng Electrical Engineering
Professional career (1)：
  • 博士(工学) (名古屋大学)
Work history (2)：
  • 2014/03 - 現在 Saga university Department of Electrical and Electronic Engineering
  • 1986/04 - 2014/03 Mitsubishi Electric Corporation
Association Membership(s) (3)：
IEEE ,  THE JAPAN SOCIETY OF APPLIED PHYSICS ,  THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
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