Rchr
J-GLOBAL ID:201801011638920964
Update date: Sep. 19, 2024
Oishi Toshiyuki
オオイシ トシユキ | Oishi Toshiyuki
Affiliation and department:
Homepage URL (1):
http://www.ee.saga-u.ac.jp/sedlab/index.htm
Research field (3):
Electronic devices and equipment
, Electronic devices and equipment
, Electric/electronic material engineering
Research keywords (10):
Wireless Power Transfer
, Gallium Oxide
, Diamond
, Gallium Nitride
, Wide Bandgap Semiconductor
, Process technologies
, Device modeling
, Device and material characteristics
, High frequency high power devices
, Electronic devices
Research theme for competitive and other funds (4):
- 2022 - 2025 Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate
- 2021 - 2024 Analysis of Physical Mechanism for GaN Semiconductors Traps by AC Two Port Network
- 2019 - 2022 Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire Substrate
- 2015 - 2018 Study on super wide band gap semiconductor toward fabrication of high power electric devices operating at high frequency
Papers (292):
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Yutaro Yamaguchi, Keigo Nakatani, Shintaro Shinjo, Toshiyuki Oishi, Yasuyuki Miyamoto. Trapping Compensation for Transient Recovery in GaN LNAs. IEEE Transactions on Microwave Theory and Techniques. 2024. 72. 7. 4006-4016
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Toshiyuki Oishi, Shiori Takada, Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka. Drain bias dependence of Y 22 and Y 21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors. Japanese Journal of Applied Physics. 2024. 63. 1. 010905-010905
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Niloy Chandra Saha, Tomoki Shiratsuchi, Toshiyuki Oishi, Makoto Kasu. Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 10. 1704-1707
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Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, Makoto Kasu. Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 6. 975-978
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Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, Makoto Kasu. Fast Switching NO2-Doped p-Channel Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 5. 793-796
more...
MISC (51):
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西村 匠史, 田渕 将也, 山口 裕太郎, 大塚 友絢, 新庄 真太郎, 山中 宏治, 大石 敏之. GaN HEMTの小信号等価回路解析による深い準位の評価-Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT-放送技術. 映像情報メディア学会技術報告 = ITE technical report. 2021. 45. 1. 5-8
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Study on small signal equivalent circuit for buffer traps to reproduce low frequency Y parameters in GaN HEMT. Record of Joint Conference of Electrical and Electronics Engineers in Kyushu. 2020. 2020. 337-337
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Kasu Makoto, Sdoeung Sayleap, Sasaki Kohei, Oishi Toshiyuki, Kawasaki Katsumi, Hirabayashi Jun, Kuramata Akito. Origin of Reverse Leakage Current in EFG β-Gallium Oxide Schottky Barrier Diodes Identified by Ultra-High Sensitive Emission Microscope. JSAP Annual Meetings Extended Abstracts. 2020. 2020.2. 2362-2362
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橋川 誠, 浦田 幸佑, 竹ノ畑 拓海, 大石 敏之, 大島 孝仁. β-Ga2O3 SBDを利用したRF-DC変換回路における負荷抵抗と電極面積依存性-Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit-レーザ・量子エレクトロニクス. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2019. 119. 304. 25-28
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石松 裕真, 舟木 浩祐, 桝谷 聡士, 宮崎 恭輔, 大島 孝仁, 嘉数 誠, 大石 敏之. NO2ホールドーピング水素終端ダイヤモンドMOS FETのDCストレス評価 (電子デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2017. 117. 331. 69-72
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Patents (153):
Books (2):
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素子分離技術総論
2000
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2000 半導体テクノロジー大全
電子ジャーナル 2000
Lectures and oral presentations (269):
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GaN HEMTのGaNトラップのY22/Y21信号と過渡応答特性比較-マルチバイアスでの比較-
(2024年電子情報通信学会総合大会 2024)
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ダイヤモンドNO2 p 型ドープMOSFET の長時間(100h)AC ストレス測定
(第84回応用物理学会春季学術講演会 2023)
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S パラメータの周波数依存性を用いたトランジスタ動作時におけるGaN HEMT のトラップとRF 特性の同時評価
(第84回応用物理学会春季学術講演会 2023)
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ノーマリオフ型EID AlGaN/GaN MOS-HEMT における膜中残留応力が電気的特性に与える影響のTCAD による検討
(第84回応用物理学会春季学術講演会 2023)
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GaN HEMT 中のトラップ位置と低周波Y21/Y22 虚部の関係(デバイスシミュレーションによる検討)
(第84回応用物理学会春季学術講演会 2023)
more...
Works (48):
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窒化物半導体装置およびその製造方法
2013 - 2013
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Semiconductor device and manufacturing method thereof
T.Oishi, Y.Yamamoto, H.Otsuka, K.Yamanaka, A.Inoue 2012 - 2012
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半導体装置の製造方法
2012 - 2012
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窒化物半導体装置の製造方法
2011 - 2011
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Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
T.Nanjo, M.Suita, Y.Abe, T.Oishi, Y.Tokuda 2011 - 2011
more...
Education (2):
- 1984 - 1986 Kyoto university Faculty of Engineerig Electrical Engineering
- 1980 - 1984 Kyoto University Graduate School of Engineerigng Electrical Engineering
Professional career (1):
Work history (2):
- 2014/03 - 現在 Saga university Department of Electrical and Electronic Engineering
- 1986/04 - 2014/03 Mitsubishi Electric Corporation
Association Membership(s) (3):
IEEE
, THE JAPAN SOCIETY OF APPLIED PHYSICS
, THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
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