Rchr
J-GLOBAL ID：201801013717882329
Update date: Nov. 28, 2024
Noriyuki Miyata
ミヤタ ノリユキ | Noriyuki Miyata
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Research theme for competitive and other funds (6)：
2019 - 2022 Two-terminal resistance change memory based on interface dipole modulation
2016 - 2019 Multi-stack interface dipole modulation memory and analog operation dynamics
2012 - 2015 Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
2011 - 2012 金属酸化物の表面反応性を利用したグラフェンの創成
2009 - 2012 Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies
2007 - 2008 An Experimental Study of Dipole-Layer Formation at Metal-Oxide/Semiconductor Interfaces
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Papers (125)：
Yuto Miyatake, Rui Tang, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Makoto Okano, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka. Photonic Matrix-Vector Multiplication with Low-Insertion-Loss and Non-Volatile Ge
2
Sb
2
Te
3
S
2
Intensity Modulators. Journal of Lightwave Technology. 2024. 42. 12. 4347-4354
Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takeshi Masuda, Takehito Jimbo, Noriyuki Miyata. Exploring thermally stable metal-oxide/SiO
2
stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response. Applied Physics Express. 2023. 16. 6. 061005-061005
Yuto Miyatake, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka. Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge
2
Sb
2
Te
3
S
2
. IEEE Transactions on Electron Devices. 2023. 70. 4. 2106-2112
Yuto Miyatake, Chong Pei Ho, Prakash Pitchappa, Ranjan Singh, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Kasidit Toprasertpong, Shinichi Takagi, et al. Non-volatile compact optical phase shifter based on Ge
2
Sb
2
Te
5
operating at 2.3 μm. Optical Materials Express. 2022. 12. 12. 4582-4582
Yuto Miyatake, Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano, Kasidit Toprasertpong, Shinich Takagi, Mitsuru Takenaka. Record-low Loss Non-volatile Mid-infrared PCM Optical Phase Shifter based on Ge
2
Sb
2
Te
3
S
2
. Technical Digest - International Electron Devices Meeting, IEDM. 2022. 2022-December. 1911-1914
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MISC (137)：
桐原芳治, 和田励虎, 辻口良太, 保井晃, 宮田典幸, 野平博司. Elucidation of Interface Dipole Modulation Mechanism by Hard X-ray Photoemission Spectroscopy. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
桐原芳治, 辻口良太, 保井晃, 宮田典幸, 野平博司. Confirmation of Interface Dipole Modulation Generation by Hard X-ray Photoemission Spectroscopy. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
宮田 典幸, 奈良 純, 山崎 隆浩, 住田 杏子, 佐野 良介, 野平 博司. 招待講演 HfO2/SiO2 MOS積層構造中の界面ダイポール変調動作-シリコン材料・デバイス. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2019. 118. 429. 27-30
Noriyuki Miyata, Jun Nara, Takahiro Yamasaki, Kyoko Sumita, Ryousuke Sano, Hiroshi Nohira. Interface Dipole Modulation in HfO
2
/SiO
2
MOS Stack Structures. Technical Digest - International Electron Devices Meeting, IEDM. 2019. 2018-December. 7.6.1-7.6.4
宮田典幸, 奈良純, 山崎隆浩, 住田杏子, 佐野良介, 野平博司. HfO
2
/SiO
2
MOS積層構造中の界面ダイポール変調動作. 電子情報通信学会技術研究報告. 2019. 118. 429(SDM2018 81-90)
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Patents (16)：
表面の平坦性および結晶構造の完全性に優れたGaSb/InAs/Si(111)構造とその形成方法、並びにその構造を用いたMOSデバイスおよび赤外線検出デバイス
不揮発性記憶素子
半導体装置、半導体装置の製造方法、半導体基板、および半導体基板の製造方法
半導体基板の製造方法および半導体基板
電界効果トランジスタ、半導体基板及び電界効果トランジスタの製造方法
ｍore...
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