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J-GLOBAL ID：201801013717882329 Update date: Sep. 01, 2020

Noriyuki Miyata

Noriyuki Miyata

Papers (108)：

Miyata Noriyuki. Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation. Applied Physics Letters. 2018. 113. 25. 251601-1-251601-5
Noriyuki Miyata. Electric-field-controlled interface dipole modulation for Si-based memory devices. Scientific Reports. 2018. 8. 1
Kirill V. Mitrofanov, Yuta Saito, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga. Resistive switching characteristics of interfacial phase-change memory at elevated temperature. Japanese Journal of Applied Physics. 2018. 57. 4
Yuta Saito, Kirill V. Mitrofanov, Kotaro Makino, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga. Sputter growth of chalcogenide superlattice films for future phase change memory applications. ECS Transactions. 2018. 86. 3. 49-54
Junji Tominaga, Yuta Saito, Kirill Mitrofanov, Nobuki Inoue, Paul Fons, Alexander V. Kolobov, Hisao Nakamura, Noriyuki Miyata. A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb2Te3 Chalcogenide Superlattices. Advanced Functional Materials. 2017. 27. 40

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MISC (127)：

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Patents (16)：

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